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Edge direct tunneling current in nanoscale MOSFET with highK dielectrics

Edge direct tunneling current in nanoscale MOSFET with highK dielectrics Purpose Choosing suitable highK gate dielectrics to reduce the offstate leakage Ioff by edge direct tunneling mechanism, demonstrating that the decreased Ioff increase significantly when the gate dielectrics permittivity are above 25. The purpose of this paper is to report that HfSiON and HfLaO are promising gate dielectrics.Designmethodologyapproach The offstate gate current, drain current, and substrate current are investigated. The IdVgs characteristics for the 50 and 90nm NMOSFET with various gate dielectrics are studied. Edge direct tunneling current IEDT with various gate dielectrics including SiO2, Si3N4 and HfO2 are compared and this paper also examines the IEDT with HfSiON and HfLaO gate dielectrics.Findings IEDT prevails over conventional gateinduced drainleakage current IGIDL, subthreshold leakage current ISUB, bandtoband tunneling current IBTBT and it dominates offstate leakage current. A large increase in offstate leakage current occurs for smaller devices due to increase in IEDT at high Vdd. Although IEDT is decreased with increase in gate dielectrics permittivity K. The authors found fringing induced barrier lowering FIBL which could introduce significant offstate leakage current for K>25. Fortunately, the IEDT with HfSiON and HfLaO gate dielectrics which are twofive orders of magnitude lower than that of SiO2, furthermore, FIBL for HfSiON and HfLaO gate dielectrics are inconspicuous. Moreover, HfLaO and HfSiON have superior electrical performance and thermal stability.Originalityvalue Both edge direct tunneling and FIBL are considered to alternate highK gate dielectrics for nanoscale MOSFET. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Edge direct tunneling current in nanoscale MOSFET with highK dielectrics

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/13565360810846626
Publisher site
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Abstract

Purpose Choosing suitable highK gate dielectrics to reduce the offstate leakage Ioff by edge direct tunneling mechanism, demonstrating that the decreased Ioff increase significantly when the gate dielectrics permittivity are above 25. The purpose of this paper is to report that HfSiON and HfLaO are promising gate dielectrics.Designmethodologyapproach The offstate gate current, drain current, and substrate current are investigated. The IdVgs characteristics for the 50 and 90nm NMOSFET with various gate dielectrics are studied. Edge direct tunneling current IEDT with various gate dielectrics including SiO2, Si3N4 and HfO2 are compared and this paper also examines the IEDT with HfSiON and HfLaO gate dielectrics.Findings IEDT prevails over conventional gateinduced drainleakage current IGIDL, subthreshold leakage current ISUB, bandtoband tunneling current IBTBT and it dominates offstate leakage current. A large increase in offstate leakage current occurs for smaller devices due to increase in IEDT at high Vdd. Although IEDT is decreased with increase in gate dielectrics permittivity K. The authors found fringing induced barrier lowering FIBL which could introduce significant offstate leakage current for K>25. Fortunately, the IEDT with HfSiON and HfLaO gate dielectrics which are twofive orders of magnitude lower than that of SiO2, furthermore, FIBL for HfSiON and HfLaO gate dielectrics are inconspicuous. Moreover, HfLaO and HfSiON have superior electrical performance and thermal stability.Originalityvalue Both edge direct tunneling and FIBL are considered to alternate highK gate dielectrics for nanoscale MOSFET.

Journal

Microelectronics International – Emerald Publishing

Published: Dec 28, 2007

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