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DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCHDRAM CELLS

DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR... Challenges to a robust and accurate implementation of electricfieldenhanccd thermalgeneration mechanisms in a driftdiffusionbased semiconductordevice simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trenchDRAM cells. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCHDRAM CELLS

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051732
Publisher site
See Article on Publisher Site

Abstract

Challenges to a robust and accurate implementation of electricfieldenhanccd thermalgeneration mechanisms in a driftdiffusionbased semiconductordevice simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trenchDRAM cells.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1991

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