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Die Attach of Large Dice with AgGlass in Multilayer Packages

Die Attach of Large Dice with AgGlass in Multilayer Packages Due to oxide formation at the die backside, excessive nonwetting and voiding can occur especially for the larger die 100K sq. mil by gold eutectic die attach. Such voiding can cause die liftoff and cracking. Agglass seems to be a promising candidate. However, it has some shortcomings. First, solder seal hermeticity reject may occur due to nickel diffusing through gold metallisation and being oxidised on the surface of the multilayer package. Secondly, for those devices requiring backside contact, gold metallisation on the die backside becomes the barrier for the reaction between the silicon and the glass. The adhesion may be degraded. The factors which may overcome these shortcomings will be discussed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

Die Attach of Large Dice with AgGlass in Multilayer Packages

Loo, M.C.; Su, K.
Microelectronics International , Volume 3 (3): 4 – Mar 1, 1986
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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/eb044239
Publisher site
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Abstract

Due to oxide formation at the die backside, excessive nonwetting and voiding can occur especially for the larger die 100K sq. mil by gold eutectic die attach. Such voiding can cause die liftoff and cracking. Agglass seems to be a promising candidate. However, it has some shortcomings. First, solder seal hermeticity reject may occur due to nickel diffusing through gold metallisation and being oxidised on the surface of the multilayer package. Secondly, for those devices requiring backside contact, gold metallisation on the die backside becomes the barrier for the reaction between the silicon and the glass. The adhesion may be degraded. The factors which may overcome these shortcomings will be discussed.

Journal

Microelectronics International – Emerald Publishing

Published: Mar 1, 1986

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