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Cu filling of TSV using various current forms for three‐dimensional packaging application

Cu filling of TSV using various current forms for three‐dimensional packaging application Purpose – The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging. Design/methodology/approach – The paper takes the form of a literature review. Findings – Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high‐speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies. Originality/value – TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu‐filling of TSV. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Soldering & Surface Mount Technology Emerald Publishing

Cu filling of TSV using various current forms for three‐dimensional packaging application

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References (37)

Publisher
Emerald Publishing
Copyright
Copyright © 2013 Emerald Group Publishing Limited. All rights reserved.
ISSN
0954-0911
DOI
10.1108/SSMT-04-2013-0011
Publisher site
See Article on Publisher Site

Abstract

Purpose – The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging. Design/methodology/approach – The paper takes the form of a literature review. Findings – Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high‐speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies. Originality/value – TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu‐filling of TSV.

Journal

Soldering & Surface Mount TechnologyEmerald Publishing

Published: Sep 13, 2013

Keywords: Cu filling; Current; Electroplating; Three‐dimensional packaging; Through‐silicon‐via (TSV)

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