Purpose – The purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates. Design/methodology/approach – Prior to the deposition, the Si (111) wafer was cut into pieces of 2×2 cm 2 . Then, the wafers were dipped for 1 min into mixture buffered oxide etchant to remove native oxide. Then, the samples were rinsed in an ultrasonic bath cleaned with boiling acetone, ethanol, and de‐ionized (DI) water for 10 min. Lastly, the wafers were rinsed in 25 ml DI water in stirred and then were blown dry with nitrogen. In this technique, the starting material is high‐purity metallic zinc (Zn) powder (99.99 per cent pure). Following, the Zn films were then annealed under air environment in the furnace at 500°C for 1 h deprived of any catalysts. Findings – These ZnO samples were studied by scanning electron microscopy, high‐resolution X‐ray diffraction (HR‐XRD), and photoluminescence (PL) spectroscopy. Atomic force microscope (AFM) images were applied to ascertain surface morphology of produced ZnO nanoscrewdrivers. XRD pattern confirmed that the ZnO nanoscrewdrivers were of polycrystalline structure in universe with a hexagonal close packed type and c ‐axis is perpendicular to the substrate. The peak at 34° correspond to the reflection planes of ZnO(002) crystallographic plane is perceived. The AFM surface images disclosed that the surfaces of produced ZnO thin films are not smooth. The PL spectrum of as‐synthesized nanoscrewdrivers shows a UV emission peak at 380 nm and a broad green emission peak at 500 nm. Originality/value – The paper reports on a simple physical evaporation route, ZnO nanoscrewdrivers were synthesized via the thermal evaporation of the high‐purity Zn powders and annealed at 500°C under air atmosphere without introducing any hetero‐metal catalysts or other carrier gases approach.
Microelectronics International – Emerald Publishing
Published: Aug 2, 2011
Keywords: ZnO nanoscrewdrivers; SEM; Zinc oxide; X‐rays; Silicon