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AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON

AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON A threeparameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amorphous silicon and from channeling implantations into <100> and <100> silicon. Simulated boron profiles obtained with the new model, with the Lindhard model, and with the OenRobinson model, respectively, are compared with experimental data on channeling and tilted implantations at 17 and 150 keV. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051709
Publisher site
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Abstract

A threeparameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amorphous silicon and from channeling implantations into <100> and <100> silicon. Simulated boron profiles obtained with the new model, with the Lindhard model, and with the OenRobinson model, respectively, are compared with experimental data on channeling and tilted implantations at 17 and 150 keV.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing

Published: Apr 1, 1991

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