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References (3)
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G. Hurkx, D. Klaassen, M.P.G. Knuvers, F. O'Hara (1989)
A new recombination model describing heavy-doping effects and low-temperature behaviourInternational Technical Digest on Electron Devices Meeting
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A. Ochoa, F. Sexton, T. Wrobel, G. Hash, R. Sokel (1983)
Snap-Back: A Stable Regenerative Breakdown Mode of MOS DevicesIEEE Transactions on Nuclear Science, 30
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S. Polak, C. Heijer, W. Schilders, P. Markowich (1987)
Semiconductor device modelling from the numerical point of viewInternational Journal for Numerical Methods in Engineering, 24
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb051736
- Publisher site
- See Article on Publisher Site
Abstract
The package CURRY offers a wide range of builtin facilities for 2D device modelling of a large variety of structures such as MOS, bipolar and charge coupled devices. These capabilities will be illustrated on the transport of a charge package in a charge coupled device and on the simulation of the ESD ElectroStatic Discharge in an MOS transistor. The CURRY package can also be used as a high quality kernel to which the user may add his own extensions by adding small pieces of Fortran code. The flexibility of this setup will be shown in the computation of the threshold voltage of an MOS transistor, in the computation of the IV curve of a diode in avalanche breakdown and in the computation of the open collector voltage of a bipolar transistor.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991