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ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLECRYSTAL SILICON

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLECRYSTAL SILICON This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in singlecrystal silicon. Both a computationally efficient semiempirical model and a physicallybased, more computationally intense Monte Carlo model have been developed for boron distributions in silicon. The resulting models account very well for the detailed profile dependence on implant dose, tilt angle, and rotation angle in addition to energy. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLECRYSTAL SILICON

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb010100
Publisher site
See Article on Publisher Site

Abstract

This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in singlecrystal silicon. Both a computationally efficient semiempirical model and a physicallybased, more computationally intense Monte Carlo model have been developed for boron distributions in silicon. The resulting models account very well for the detailed profile dependence on implant dose, tilt angle, and rotation angle in addition to energy.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing

Published: Apr 1, 1992

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