A nonequilibrium multivalley transport model for carriers in compound semiconductor devices has been developed. This macroscopic transport model provides an efficient scheme for device modeling, and can overcome the difficulty in evaluating the relaxation times in multivalley conservation equations without a priori assumption of the displacedMaxwellian distribution. This model has been successfully applied to electron transport in GaAs subjected to rapidly timevarying fields. The results have suggested that the macroscopic effective mass of electrons might be strongly dependent on average velocity.
COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991
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