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A novel high accuracy bandgap reference voltage source

A novel high accuracy bandgap reference voltage source PurposeThis paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology.Design/methodology/approachDifferent from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit.FindingsThis design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip.Originality/valueThis paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Circuit World Emerald Publishing

A novel high accuracy bandgap reference voltage source

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References (4)

Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0305-6120
DOI
10.1108/CW-04-2017-0019
Publisher site
See Article on Publisher Site

Abstract

PurposeThis paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology.Design/methodology/approachDifferent from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit.FindingsThis design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip.Originality/valueThis paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

Journal

Circuit WorldEmerald Publishing

Published: Nov 6, 2017

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