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A frequency tunable halfwave resonator using a MEMS variable capacitor

A frequency tunable halfwave resonator using a MEMS variable capacitor A frequency tunable halfwave resonator at 3GHz is presented with a microelectromechanical systems MEMS variable capacitor as the tuning element. The capacitor is fabricated using the multiuser MEMS process MUMPs technology provided by JDSCronos, and transferred to an alumina substrate by an inhouse developed flipchip process. This capacitor is electrostatically actuated. The resulting CV response is linear with a slope of 0.05pFV for a wide range of actuation voltages. The MEMS device has a capacitance ratio of 31 for 070V bias, with a Qfactor of 140 measured at 1GHz. A halfwave tunable microstrip resonator with bias lines is designed to include this MEMS device, which exhibits linear tuning over 180MHz 6 percent centered around 3GHz with a constant 3dB bandwidth of 160MHz over the entire tuning range. The power consumption of the MEMS device was measured to be negligible. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

A frequency tunable halfwave resonator using a MEMS variable capacitor

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/13565360310455481
Publisher site
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Abstract

A frequency tunable halfwave resonator at 3GHz is presented with a microelectromechanical systems MEMS variable capacitor as the tuning element. The capacitor is fabricated using the multiuser MEMS process MUMPs technology provided by JDSCronos, and transferred to an alumina substrate by an inhouse developed flipchip process. This capacitor is electrostatically actuated. The resulting CV response is linear with a slope of 0.05pFV for a wide range of actuation voltages. The MEMS device has a capacitance ratio of 31 for 070V bias, with a Qfactor of 140 measured at 1GHz. A halfwave tunable microstrip resonator with bias lines is designed to include this MEMS device, which exhibits linear tuning over 180MHz 6 percent centered around 3GHz with a constant 3dB bandwidth of 160MHz over the entire tuning range. The power consumption of the MEMS device was measured to be negligible.

Journal

Microelectronics International – Emerald Publishing

Published: Apr 1, 2003

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