A novel technology for a multichip module MCM on silicon is presented. The technology features the integration of a power and a ground plane, resulting in a fiveconductor layer module, the use of the heavily n doped Si as the ground plane for integrated decoupling capacitances, integrated low TCR NiCr resistors, low resistance 13m per square TiWCuTiW metallisation, high quality PECVD oxynitride SiON insulation layers, which are optimised to a low stress content, and a new wetdry etch technique for the vias. The module is able to handle 200MHz clock frequencies and, when carefully designed, can also be used for optoelectronic interconnections in the GHz range. A test module for DC and HF characterisation has been designed and produced. Preliminary test results are presented.
Microelectronics International – Emerald Publishing
Published: Apr 1, 1998
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