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- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb051710
- Publisher site
- See Article on Publisher Site
Abstract
A comprehensive and computationally efficient modeling strategy for the rapid and accurate simulation of implanted impurity distribution profiles in singlecrystal silicon has been developed. This modeling strategy exploits the advantages of both Monte Carlo simulation and semiempirical models by combining the two approaches in a complementary manner. The dual Pearson semiempirical model is used to accurately and efficiently model the dose and implant angle dependence of impurity profiles as well as the dependence on energy. This new comprehensive model allows convenient and accurate simulation of implanted boron distribution profiles in singlecrystal silicon as a function of dose, tilt angle, and rotation angle, in addition to ion energy, and it has been demonstrated by implementation in the process simulation code SUPREM III.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991