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/lp/emerald-publishing/a-comparison-between-the-heterojunction-bipolar-transistor-power-BKuvgp93O8
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb051707
- Publisher site
- See Article on Publisher Site
Abstract
This model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. The model is used to calculate the large signal Y parameters of an HBT. A comparison is made between predicted power performance using the Y parameters and a fully numerical, time domain computation. Advantages and disadvantages of each approach are given.
Journal
COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1991