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A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL Y PARAMETERS AND A FULL TIME DOMAIN SIMULATION

A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE... This model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. The model is used to calculate the large signal Y parameters of an HBT. A comparison is made between predicted power performance using the Y parameters and a fully numerical, time domain computation. Advantages and disadvantages of each approach are given. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL Y PARAMETERS AND A FULL TIME DOMAIN SIMULATION

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051707
Publisher site
See Article on Publisher Site

Abstract

This model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. The model is used to calculate the large signal Y parameters of an HBT. A comparison is made between predicted power performance using the Y parameters and a fully numerical, time domain computation. Advantages and disadvantages of each approach are given.

Journal

COMPEL: Theinternational Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1991

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