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2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON

2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

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References (3)

Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb051716
Publisher site
See Article on Publisher Site

Abstract

A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Apr 1, 1991

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