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- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 1356-5362
- DOI
- 10.1108/13565360410531971
- Publisher site
- See Article on Publisher Site
Abstract
Modifications of physical and electrical properties of the vertical doublediffused metal oxide semiconductor VDMOS transistor are observed on using the device under some conditions of functional stress. This paper presents the characterization and the 2D simulation for the pre and poststressed device, to point out the degraded parameters due to the functional stress, and to analyze their effects on the degradation of the VDMOS static and dynamic characteristics.
Journal
Microelectronics International – Emerald Publishing
Published: Aug 1, 2004