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2D analysis of functional stress degradations on power VDMOS transistor

2D analysis of functional stress degradations on power VDMOS transistor Modifications of physical and electrical properties of the vertical doublediffused metal oxide semiconductor VDMOS transistor are observed on using the device under some conditions of functional stress. This paper presents the characterization and the 2D simulation for the pre and poststressed device, to point out the degraded parameters due to the functional stress, and to analyze their effects on the degradation of the VDMOS static and dynamic characteristics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Emerald Publishing

2D analysis of functional stress degradations on power VDMOS transistor

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Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
1356-5362
DOI
10.1108/13565360410531971
Publisher site
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Abstract

Modifications of physical and electrical properties of the vertical doublediffused metal oxide semiconductor VDMOS transistor are observed on using the device under some conditions of functional stress. This paper presents the characterization and the 2D simulation for the pre and poststressed device, to point out the degraded parameters due to the functional stress, and to analyze their effects on the degradation of the VDMOS static and dynamic characteristics.

Journal

Microelectronics International – Emerald Publishing

Published: Aug 1, 2004

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