Very high photoresponse towards low-powered UV light under low-biased condition by nanocrystal assembled TiO2 film

Very high photoresponse towards low-powered UV light under low-biased condition by nanocrystal... Article history: There is an increasing interest in harvesting photoejected electrons for highly sensitive photodetectors, Received 1 May 2017 by interfacial engineering rather than the classic semiconductors. However, the widely employed device Received in revised form 27 July 2017 structures involving a p-n junction that causes photogenerated electron-hole separation to enhance the Accepted 4 August 2017 response are usually complex with a high fabrication challenge. Here, we present TiO -based highly effi- Available online 16 August 2017 cient ultraviolet (UV) photodetection by achieving its nanocrystal assembled film having high surface defects. The sol-gel derived TiO films have been subjected to a post-growth annealing at 500 C in air Keywords: (SA) and vacuum (SB) and one subjected to UV treatment (SC) to tune the surface defects. The UV pho- Low power toresponse results show that the nanocrystal assembled UV cured TiO film shows as high as 1.7 × 10 UV UV-to-visible rejection ratio and photo-to-dark current ratio of 1.2 × 10 under 10 V bias and 10 W Photoresponse incident light power. Most interestingly, unprecedently high photo-to-dark current ratio of the order of Low bias Nanocrystal assembled ∼10 at as low as 1 V bias condition and only 10 W http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Very high photoresponse towards low-powered UV light under low-biased condition by nanocrystal assembled TiO2 film

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Publisher
Elsevier
Copyright
Copyright © 2017 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2017.08.037
Publisher site
See Article on Publisher Site

Abstract

Article history: There is an increasing interest in harvesting photoejected electrons for highly sensitive photodetectors, Received 1 May 2017 by interfacial engineering rather than the classic semiconductors. However, the widely employed device Received in revised form 27 July 2017 structures involving a p-n junction that causes photogenerated electron-hole separation to enhance the Accepted 4 August 2017 response are usually complex with a high fabrication challenge. Here, we present TiO -based highly effi- Available online 16 August 2017 cient ultraviolet (UV) photodetection by achieving its nanocrystal assembled film having high surface defects. The sol-gel derived TiO films have been subjected to a post-growth annealing at 500 C in air Keywords: (SA) and vacuum (SB) and one subjected to UV treatment (SC) to tune the surface defects. The UV pho- Low power toresponse results show that the nanocrystal assembled UV cured TiO film shows as high as 1.7 × 10 UV UV-to-visible rejection ratio and photo-to-dark current ratio of 1.2 × 10 under 10 V bias and 10 W Photoresponse incident light power. Most interestingly, unprecedently high photo-to-dark current ratio of the order of Low bias Nanocrystal assembled ∼10 at as low as 1 V bias condition and only 10 W

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2018

References

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