Transition of thermal rectification in silicon nanocones

Transition of thermal rectification in silicon nanocones Applied Thermal Engineering 102 (2016) 1075–1080 Contents lists available at ScienceDirect Applied Thermal Engineering journal homepage: www.elsevier.com/locate/apthermeng Research Paper Transition of thermal rectification in silicon nanocones a a,⇑ a b,⇑ Zhongwei Zhang , Yuanping Chen , Yuee Xie , Shengbai Zhang Department of Physics, Xiangtan University, Xiangtan 411105, Hunan, PR China Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA highl i ghts graphical a bstrac t Thermal rectification does not increase monotonically with geometric asymmetry. Phonon modes change from localized to delocalized with increasing angle. Different phonon modes changing speed of two sides explain the phenomenon. A fundamental basis is provided to study abnormal transport in phononics. article i nfo abstract Article history: Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the Received 27 November 2015 relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The Accepted 21 March 2016 higher the asymmetry, the higher the R. However, by using nonequilibrium molecular dynamics method Available online 12 April 2016 we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect and R http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Thermal Engineering Elsevier

Transition of thermal rectification in silicon nanocones

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Publisher
Elsevier
Copyright
Copyright © 2016 Elsevier Ltd
ISSN
1359-4311
eISSN
1873-5606
D.O.I.
10.1016/j.applthermaleng.2016.03.083
Publisher site
See Article on Publisher Site

Abstract

Applied Thermal Engineering 102 (2016) 1075–1080 Contents lists available at ScienceDirect Applied Thermal Engineering journal homepage: www.elsevier.com/locate/apthermeng Research Paper Transition of thermal rectification in silicon nanocones a a,⇑ a b,⇑ Zhongwei Zhang , Yuanping Chen , Yuee Xie , Shengbai Zhang Department of Physics, Xiangtan University, Xiangtan 411105, Hunan, PR China Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA highl i ghts graphical a bstrac t Thermal rectification does not increase monotonically with geometric asymmetry. Phonon modes change from localized to delocalized with increasing angle. Different phonon modes changing speed of two sides explain the phenomenon. A fundamental basis is provided to study abnormal transport in phononics. article i nfo abstract Article history: Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the Received 27 November 2015 relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The Accepted 21 March 2016 higher the asymmetry, the higher the R. However, by using nonequilibrium molecular dynamics method Available online 12 April 2016 we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect and R

Journal

Applied Thermal EngineeringElsevier

Published: Jun 5, 2016

References

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