Article history: Detailed microstructural studies were performed on Ni/Si ohmic contacts to silicon carbide in order to Received 21 December 2015 investigate the effect of initial Ni:Si ratio in as-deposited structures on the occurrence of characteristic Accepted 9 February 2016 defects in Ni silicide layers, such as voids, layer discontinuities, rough surface or rough interface. The Available online 11 February 2016 chosen range of investigated Ni:Si ratios corresponded to -Ni Si as a dominant phase after complete annealing sequence. Strong effect of the initial stoichiometry on the ohmic contact’s microstructure was Keywords: observed. The highest Ni concentration signiﬁcantly lowered the temperature at which roughening of Ohmic contact the surface and the interface occurred. The middle value of investigated concentrations resulted in the Silicon carbide rough interface after high temperature annealing, while the lowest investigated Ni content preserved Nickel silicides smooth interface but introduced large voids and layer discontinuities. After the ﬁrst annealing step, - Microstructure Ni Si and/or -Ni Si phases were detected. In the ohmic contacts (after two-step annealing sequence), 31 12 2 beside -Ni Si, the metastable, high temperature phase -Ni Si was detected (also referred to as Ni Si ·h). 2 2 3 2 This phase
Applied Surface Science – Elsevier
Published: Apr 30, 2016
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