Thin film resistors are widely used in electronic industry. Analogue technique requires a certain precision from the components and a good prediction of what change can happen during application. This paper presents a method for prediction of resistive value changes due to ageing for any relevant condition in the temperature–time-expanse. The method is based and derived from the Arrhenius’ equation. Three new characteristics for stability prediction and evaluation of thin film resistors are introduced: temperature dependence of drift f(t)R , drift potential ln(Δ R/R ) pot , and temperature of absolute stability T stab . Differences and influencing parameter of material and processes on thin film resistor manufacturing will be discussed.
Microelectronics Reliability – Elsevier
Published: Jan 1, 2009
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