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- Publisher
- Elsevier
- Copyright
- Copyright © 2018 Elsevier B.V.
- ISSN
- 0301-9268
- eISSN
- 1872-7433
- D.O.I.
- 10.1016/j.apsusc.2018.02.191
- Publisher site
- See Article on Publisher Site
Abstract
Applied Surface Science 442 (2018) 487–500 Contents lists available at ScienceDirect Applied Surface Science journal homepage: www.elsevier.com/locate/apsusc Full Length Article Spectral artefacts post sputter-etching and how to cope with them – A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams a,b,⇑ c a,1 Erik Lewin , Jonathan Counsell , Jörg Patscheider Laboratory for Nanoscale Materials Science, Empa, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland Inorganic Chemistry, Department of Chemistry – Ångström Laboratory, Uppsala university, Box 538, SE-751 21 Uppsala, Sweden Kratos Analytical Ltd, Trafford Wharf Road, Manchester M17 1G, United Kingdom article i nfo abstract Article history: The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film Received 22 August 2017 materials with varying thermodynamical stability. Stability of the materials was controlled by alloying Revised 29 January 2018 AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were Accepted 19 February 2018 + sputter-etched with monoatomic Ar with energies between 0.2 and 4.0 keV to study the sensitivity of Available online 21 February 2018 the materials for sputter damage. The use of Ar clusters to remove an oxidised surface layer was also
Journal
Precambrian Research – Elsevier
Published: May 1, 2018
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References
-
Auger- and X-Ray Photoelectron Spectroscopy in Materials ScienceHofmann, S.
-
XPS depth profile analysis of non-stoichiometric NiO filmsOswald, S.; Brückner, W.
-
XPS study of the effects of long-term Ar+ ion and Ar cluster sputtering on the chemical degradation of hydrozincite and iron oxideSteinberger, R.; Walter, J.; Greunz, T.; Duchoslav, J.; Arndt, M.; Molodtsov, S.; Meyer, D.C.; Stifter, D.
-
XPS studies on surface reduction of tungsten oxide nanowire film by Ar+ bombardmentXie, F.Y.; Gong, L.; Liu, X.; Tao, Y.T.; Zhang, W.H.; Chen, S.H.; Meng, H.; Chen, J.
-
XPS study of MoO3 and WO3 oxide surface modification by low-energy Ar+ ion bombardmentAlov, N.V.
-
X-ray photoelectron spectroscopic (XPS) investigations of etching and annealing effects on thin films of MoO3Anwar, M.; Hogarth, C.A.; Khan, G.A.; Bulpett, R.
-
XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxideSimpson, R.; White, R.G.; Watts, J.F.; Baker, M.A.
-
Reduced preferential sputtering of TiO2 using massive argon clustersCounsell, J.D.P.; Roberts, A.J.; Boxford, W.; Moffitt, C.; Takahashi, K.
-
Core-level photoemission and near-edge x-ray absorption fine-structure studies of GaN surface under low-energy ion bombardmentPetravic, M.; Deenapanray, P.N.K.; Coleman, V.A.; Kim, K.-J.; Kim, B.; Li, G.
-
Formation of defects in boron nitride by low energy ion bombardmentPeter, R.; Bozanic, A.; Petravic, M.; Chen, Y.; Fan, L.-J.; Yang, Y.-W.
-
C60 sputtering of organics: a study using TOF-SIMS, XPS and nanoindentationFisher, G.L.; Dickinson, M.; Bryan, S.R.; Moulder, J.
-
X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profilingMiyayama, T.; Sanada, N.; Suzuki, M.; Hammond, J.S.; Si, S.-Q.D.; Takahara, A.
-
Defect formation in graphene during low-energy ion bombardmentAhlberg, P.; Johansson, F.O.L.; Zhang, Z.B.; Jansson, U.; Zhang, S.L.; Lindblad, A.; Nyberg, T.
-
Noble gas ion effects on the XPS valence band spectra of siliconWalker, E.; Lund, C.P.; Jennings, P.; Cornish, J.C.L.; Klauber, C.; Hefter, G.
-
Understanding the effects of sputter damage in W-S thin films by HAXPESSundberg, J.; Lindblad, R.; Gorgoi, M.; Rensmo, H.; Jansson, U.; Lindblad, A.
-
XPS investigation of preferential sputtering of S from MoS2 and determination of MoSx stoichiometry from Mo and S peak positionsBaker, M.A.; Gilmore, R.; Lenardi, C.; Gissler, W.
-
Electronic structure of Ar+ ion-sputtered thin-film MoS2: a XPS and IPES studySantoni, A.; Rondino, F.; Malerba, C.; Valentini, M.; Mittiga, A.
-
Influence of sputter damage on the XPS analysis of metastable nanocomposite coatingsLewin, E.; Gorgoi, M.; Schäfers, F.; Svensson, S.; Jansson, U.
-
Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin filmsTengstrand, O.; Nedfors, N.; Andersson, M.; Lu, J.; Jansson, U.; Flink, A.; Eklund, P.; Hultman, L.
-
Beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films during transmission electron microscopyTengstrand, O.; Nedfors, N.; Andersson, M.; Lu, J.; Jansson, U.; Flink, A.; Eklund, P.; Hultman, L.
-
Computer simulations of surface analysis using ion beamsIgnatova, V.; Karpuzov, D.; Chakarov, I.; Katardjiev, I.
-
Preferential sputtering of oxides: a comparison of model predictions with experimental dataMalherbe, J.B.; Hofmann, S.; Sanz, J.M.
-
ESCA studies on changes in surface composition under ion bombardmentHolm, R.; Storp, S.
-
An XPS study of ion-induced compositional changes with group II and group IV compoundsChristie, A.B.; Lee, J.; Sutherland, I.; Walls, J.M.
-
Composition changes in bombarded oxides and carbides: the distinction between ballistic, chemically guided, and chemically random behaviorKelly, R.; Bertóti, I.; Miotello, A.
-
On the problem of whether mass or chemical bonding is more important to bombardment-induced compositional changes in alloys and oxidesKelly, R.
-
Ion-beam-induced chemical changes in the oxyanions (MOyn-) and oxides (MOx) where M = chromium, molybdenum, tungsten, vanadium, niobium and tantalumHo, S.F.; Contarini, S.; Rabalais, J.W.
-
A complete and self-consistent evaluation of XPS spectra of TiNJaeger, D.; Patscheider, J.
-
Consequences of air exposure on the lithiated graphite SEIMalmgren, S.; Ciosek, K.; Lindblad, R.; Plogmaker, S.; Kühn, J.; Rensmo, H.; Edström, K.; Hahlin, M.
-
Venting temperature determines surface chemistry of magnetron sputtered TiN filmsGreczynski, G.; Mráz, S.; Hultman, L.; Schneider, J.M.
-
Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefactsGreczynski, G.; Primetzhofer, D.; Hultman, L.
-
A comparison of in situ polishing and ion beam sputtering as surface preparation methods for XPS analysis of PVD coatingsBaker, M.A.; Greaves, S.J.; Wendler, E.; Fox, V.
-
On the chemistry at the Si Ti-doped a-C:H/TiC interfaceErnst, K.-H.; Oral, B.
-
Recent applications of hard x-ray photoelectron spectroscopyWeiland, C.; Rumaiz, A.K.; Pianetta, P.; Woicik, J.C.
-
Monochromatized Ag Lα X-rays as a source for higher energy XPSYates, K.; West, R.H.
-
Development of the hard-X-ray angle resolved X-ray photoemission spectrometer for laboratory useKobata, M.; Píš, I.; Iwai, H.; Yamazui, H.; Takahashi, H.; Suzuki, M.; Matsuda, H.; Daimon, H.; Kobayashi, K.
-
HAXPES-Lab: The First Laboratory based Hard X-ray Photoelectron Spectroscopy System using a 9.25 keV X-ray SourcePatt, M.; Eriksson, S.
-
HAXPES studies of solid materials for applications in energy and information technology using the HIKE facility at HZB-BESSY IIGorgoi, M.; Mårtensson, N.; Svensson, S.
-
Comparison of Ar+ Monoatomic and cluster ion sputtering of Ta2O5 at different ion energies, by XPS: Part 1 - Monoatomic IonsGrilli, R.; Simpson, R.; Mallinson, C.F.; Baker, M.A.
-
Materials processing by gas cluster ion beamsYamada, I.; Matsuo, J.; Toyoda, N.; Kirkpatrick, A.
-
Observed damage during Argon gas cluster depth profiles of compound semiconductorsBarlow, A.J.; Portoles, J.F.; Cumpson, P.J.
-
Microstructure and mechanical properties of Al-Si-N transparent hard coatings deposited by magnetron sputteringPélisson, A.; Parlinska-Wojtan, M.; Hug, H.J.; Patscheider, J.
-
Morphology, microstructure evolution and optical properties of Al–Si–N nanocomposite coatingsPélisson-Schecker, A.; Hug, H.J.; Patscheider, J.
-
Nanocomposite Al-Ge-N thin films and their mechanical and optical propertiesLewin, E.; Parlinska-Wojtan, M.; Patscheider, J.
-
Structure and properties of sputter-deposited Al-Sn-N thin filmsLewin, E.; Patscheider, J.
-
Comparison of Al-Si-N nanocomposite coatings deposited by HIPIMS and DC magnetron sputteringLewin, E.; Loch, D.; Montagne, A.; Ehiasarian, A.P.; Patscheider, J.
-
Complex phase compositions in nanostructured coatings as evidenced by photoelectron spectroscopy: THE case of Al-Si-N hard coatingsPélisson-Schecker, A.; Hug, H.J.; Patscheider, J.
-
SI Chemical DataAylward, G.; Findlay, T.
-
Silicon nitride: enthalpy of formation of the α- and β-polymorphs and the effect of C and O impuritiesLiang, J.-J.; Topor, L.; Navrotsky, A.; Mitomo, M.
-
Summary of ISO/TC 201 Standard: VII ISO 15472:2001 - surface chemical analysis - X-ray photoelectron spectrometers - calibration of energy scalesSeah, M.P.
-
Characterization of nitride coatings by XPSBertóti, I.
-
Charge referencing issues in XPS of insulators as evidenced in the case of Al-Si-N thin filmsPélisson-Schecker, A.; Hug, H.J.; Patscheider, J.
-
Surface charge neutralization of insulating samples in X-ray photoemission spectroscopyLarson, P.E.; Kelly, M.A.
-
Srim-2003Ziegler, J.F.
-
Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV rangeTanuma, S.; Powell, C.J.; Penn, D.R.
-
Handbook of X-ray Photoelectron SpectroscopyMoulder, J.F.; Stickle, W.F.; Sobol, P.E.; Bomben, K.D.
-
X-ray Data BookletThompson, A.; Lindau, I.; Attwood, D.; Liu, Y.; Gullikson, E.; Pianetta, P.; Howells, M.; Robinson, A.; Kim, K.-J.; Scofield, J.; Kirz, J.; Underwood, J.; Kortright, J.; Williams, G.; Winick, H.
-
Valence band structure of amorphous germanium-nitrogen alloysComedi, D.; Zanatta, A.R.; Chambouleyron, I.; Alvarez, F.
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