Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered SRO films

Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered... In this work, the structural and optical properties of co-sputtered SRO (Silicon Rich Oxide) films are studied as a function of the annealing temperature and the change in the Si (Silicon) content. Si-excess of 4.4–16.9at.% were obtained by a variation of RF-power densities applied to Si target from 1.97 to 3.94W/cm2, respectively. The Si-excess calculated by XPS promotes the formation of Si clusters within SRO films where the size depends on the Si-excess quantity. After annealing, ultra-small oxidized silicon nanocrystals (Si-NCs) and agglomeration of Si-excess, promotes the possible creation of Si=O, centers like Eδ′ and ODC defects at the surface of Si-NCs. Therefore, two broad Photoluminescence (PL) bands are observed in the red (1.5–1.7eV) and blue (2–2.9eV) region. A high emission intensity in red region is observed in sample with 5.9at.% of Si-excess, which could be related with a complete activation of defects (Si=O) favored by the dominant average size of the Si-NCs (1.68nm). The density and average size of Si-NCs increase according to Si-excess, whereby a decrease in PL intensity is observed. Thus, a considerable Si-excess (>10at.%) is not necessary to obtain the maximum PL emission in red region. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Luminescence Elsevier

Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered SRO films

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Publisher
Elsevier
Copyright
Copyright © 2016 Elsevier B.V.
ISSN
0022-2313
eISSN
1872-7883
D.O.I.
10.1016/j.jlumin.2016.02.033
Publisher site
See Article on Publisher Site

Abstract

In this work, the structural and optical properties of co-sputtered SRO (Silicon Rich Oxide) films are studied as a function of the annealing temperature and the change in the Si (Silicon) content. Si-excess of 4.4–16.9at.% were obtained by a variation of RF-power densities applied to Si target from 1.97 to 3.94W/cm2, respectively. The Si-excess calculated by XPS promotes the formation of Si clusters within SRO films where the size depends on the Si-excess quantity. After annealing, ultra-small oxidized silicon nanocrystals (Si-NCs) and agglomeration of Si-excess, promotes the possible creation of Si=O, centers like Eδ′ and ODC defects at the surface of Si-NCs. Therefore, two broad Photoluminescence (PL) bands are observed in the red (1.5–1.7eV) and blue (2–2.9eV) region. A high emission intensity in red region is observed in sample with 5.9at.% of Si-excess, which could be related with a complete activation of defects (Si=O) favored by the dominant average size of the Si-NCs (1.68nm). The density and average size of Si-NCs increase according to Si-excess, whereby a decrease in PL intensity is observed. Thus, a considerable Si-excess (>10at.%) is not necessary to obtain the maximum PL emission in red region.

Journal

Journal of LuminescenceElsevier

Published: Aug 1, 2016

References

  • J. Appl. Phys.
    Lopez-Vidrier, J.; Hernández, S.; Hiller, D.; Gutsch, S.; López-Conesa, L.; Estrade, S.; Peiro, F.; Zacharias, M.; Garrido, B.
  • Appl. Phys. Lett.
    Shimizu-Iwayama, T.; Nakao, S.; Saitoh, K.
  • Sol. Energy Mater. Sol. Cells
    Hao, X.J.; Cho, E.C.; Flynn, C.; Shen, Y.S.; Park, S.C.; Conibeer, G.; Green, M.A.
  • Phys. Rev. B
    Delerue, C.; Allan, G.; Lannoo, M.

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