In this paper, we report the study of transport and magnetic properties of ytterbium hexaboride (YbB6) nanowires grown by a low trigger-temperature (200–240 °C) solid state method. The temperature dependence of resistivity shows that the YbB6 nanowire undergoes a semiconductor-insulator transition (SIT) below 20 K with an activation energy ΔE of 1 meV. The value of ρ at 2 K reaches 49 times the value of ρ at 300 K (ρ2 K/ρ300 K = 49). The observed non-saturating magnetoresistance (MR) has a linear relationship with B2. The anomalous electronic transport in the YbB6 nanowire can be explained by the mixed valence of Yb ions due to the boron deficiency supporting by the X-ray photoelectron spectroscopy (XPS) and paramagnetic magnetization.
Journal of Solid State Chemistry – Elsevier
Published: Jun 1, 2018
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