Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O2 flow rate. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronic Engineering Elsevier

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

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Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier B.V.
ISSN
0167-9317
eISSN
1873-5568
D.O.I.
10.1016/j.mee.2018.01.017
Publisher site
See Article on Publisher Site

Abstract

This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O2 flow rate.

Journal

Microelectronic EngineeringElsevier

Published: May 5, 2018

References

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