Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O2 flow rate. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronic Engineering Elsevier

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

Loading next page...
 
/lp/elsevier/reactive-ion-etching-of-poly-cyclohexene-carbonate-in-oxygen-plasma-ubAptp9V5T
Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier B.V.
ISSN
0167-9317
eISSN
1873-5568
D.O.I.
10.1016/j.mee.2018.01.017
Publisher site
See Article on Publisher Site

Abstract

This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O2 flow rate.

Journal

Microelectronic EngineeringElsevier

Published: May 5, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off