Article history: The integration of La Sr MnO (LSMO) thin ﬁlm technology into established industrial silicon processes 1-x x 3 Received 30 March 2017 is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the Received in revised form 12 July 2017 interface of LSMO and silicon. In this work, we investigated the physical properties of thin La Sr MnO 0.73 0.27 3 Accepted 4 August 2017 ﬁlms deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The inﬂuence Available online 12 August 2017 of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, Keywords: atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin ﬁlms LSMO exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 C. The Magnetoresistivity dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in Perovskite oxides combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice Spectroscopic ellipsometry Magneto-opical kerr effect spectroscopy matched ﬁlms on single crystal substrates reported in literature . The values
Applied Surface Science – Elsevier
Published: Jan 1, 2018
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