Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference Article history: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser Received 9 August 2015 interference patterning. Significant different results were observed on epi-ready and homo-epitaxial Received in revised form 30 October 2015 GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irra- Accepted 10 November 2015 diation process. In the case of two-pulse patterning, a noticeable morphology transformation induced Available online 29 November 2015 by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving Keywords: the heat diffusion equations. Periodic nanostructures © 2015 Elsevier B.V. All rights reserved. GaAs Laser interference patterning 1. Introduction substrates grown by molecular beam epitaxy (MBE) were used in the experiments. The accumulation effect of pulsed laser in There is a current interest in producing nanostructures on the same region was studied by two-pulse LIL patterning on semiconductor surface for their wide applications in many areas homo-epitaxial GaAs substrate. Based on photo-thermal mode, [1–4]. GaAs is one of the most important semiconductor mate- temperature distribution on GaAs surface as a function http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

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Publisher
Elsevier
Copyright
Copyright © 2015 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2015.11.105
Publisher site
See Article on Publisher Site

Abstract

Article history: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser Received 9 August 2015 interference patterning. Significant different results were observed on epi-ready and homo-epitaxial Received in revised form 30 October 2015 GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irra- Accepted 10 November 2015 diation process. In the case of two-pulse patterning, a noticeable morphology transformation induced Available online 29 November 2015 by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving Keywords: the heat diffusion equations. Periodic nanostructures © 2015 Elsevier B.V. All rights reserved. GaAs Laser interference patterning 1. Introduction substrates grown by molecular beam epitaxy (MBE) were used in the experiments. The accumulation effect of pulsed laser in There is a current interest in producing nanostructures on the same region was studied by two-pulse LIL patterning on semiconductor surface for their wide applications in many areas homo-epitaxial GaAs substrate. Based on photo-thermal mode, [1–4]. GaAs is one of the most important semiconductor mate- temperature distribution on GaAs surface as a function

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2016

References

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