On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed... Article history: In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction of metal- Received 19 May 2017 lic manganese with a (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self-assembled monolayer Received in revised form 12 July 2017 (SAM) on SiO and non-porous low-k dielectric materials. Subsequent deposition of a ∼0.5 nm thick Mn, Accepted 2 August 2017 followed by a 200 C anneal results in the Mn diffusing through the SAM to interact with the underlying Available online 5 August 2017 SiO layer to form a Mn-silicate layer. Furthermore, there is evidence that the Mn interacts with the carbon and nitrogen within the SAM to form Mn-carbide and Mn-nitride, respectively. When deposited Keywords: on low-k materials the Mn is found to diffuse through to the SAM on deposition and interact both with Self-assembled monolayers the SAM and the underlying substrate in a similar fashion. Manganese silicate © 2017 Elsevier B.V. All rights reserved. XPS Low-k dielectric Interconnects 1. Introduction both Cu and Si and have also been shown to halt diffusion of the Cu into the dielectric [2–6]. Any new potential copper diffusion bar- Interconnect performance in integrated circuits (ICs) is rier also needs to be compatible with low-k, interlayer http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

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Publisher
Elsevier
Copyright
Copyright © 2017 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2017.08.020
Publisher site
See Article on Publisher Site

Abstract

Article history: In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction of metal- Received 19 May 2017 lic manganese with a (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self-assembled monolayer Received in revised form 12 July 2017 (SAM) on SiO and non-porous low-k dielectric materials. Subsequent deposition of a ∼0.5 nm thick Mn, Accepted 2 August 2017 followed by a 200 C anneal results in the Mn diffusing through the SAM to interact with the underlying Available online 5 August 2017 SiO layer to form a Mn-silicate layer. Furthermore, there is evidence that the Mn interacts with the carbon and nitrogen within the SAM to form Mn-carbide and Mn-nitride, respectively. When deposited Keywords: on low-k materials the Mn is found to diffuse through to the SAM on deposition and interact both with Self-assembled monolayers the SAM and the underlying substrate in a similar fashion. Manganese silicate © 2017 Elsevier B.V. All rights reserved. XPS Low-k dielectric Interconnects 1. Introduction both Cu and Si and have also been shown to halt diffusion of the Cu into the dielectric [2–6]. Any new potential copper diffusion bar- Interconnect performance in integrated circuits (ICs) is rier also needs to be compatible with low-k, interlayer

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2018

References

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