Modulation of carrier concentration and microstructure for high performance BixSb2-xTe3 thermoelectrics prepared by rapid solidification

Modulation of carrier concentration and microstructure for high performance BixSb2-xTe3... In this study, a series of BixSb2-xTe3 were prepared by vacuum melting, melt spinning combined with the plasma activated sintering (SPS) process. The influence of Bi/Sb ratio on the phase composition and thermoelectric properties were systematically discussed. The carrier concentration increases gradually with the increasing Sb content. Due to the optimized carrier concentration while preserving high Seebeck coefficient through adjusting Bi/Sb ratio, Bi0.46Sb1.54Te3 sample obtains the highest power factor of 3.90 mW m−1 K−2 at room temperature. Moreover, the microstructure is effectively modified by adjusting the linear speed of the copper roller, where the average grains size decreases gradually with the increasing speed of melting spinning (MS). The sample synthesized with the MS speed of 20 m/s possesses the widest distribution of grains size spanning from several nanometer to tens of micrometer, which scatters the phonons with wider range of mean free paths, resulting in the lowest lattice thermal conductivity of 0.64 W m−1 K−1 at 350 K. Benefitting from the decreased lattice thermal conductivity and enhanced power factor, a peak ZT value of around 1.2 is obtained at 350 K for the Bi0.46Sb1.54Te3 specimen with the MS speed of 20 m/s. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Solid State Chemistry Elsevier

Modulation of carrier concentration and microstructure for high performance BixSb2-xTe3 thermoelectrics prepared by rapid solidification

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Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier Inc.
ISSN
0022-4596
eISSN
1095-726X
D.O.I.
10.1016/j.jssc.2018.04.038
Publisher site
See Article on Publisher Site

Abstract

In this study, a series of BixSb2-xTe3 were prepared by vacuum melting, melt spinning combined with the plasma activated sintering (SPS) process. The influence of Bi/Sb ratio on the phase composition and thermoelectric properties were systematically discussed. The carrier concentration increases gradually with the increasing Sb content. Due to the optimized carrier concentration while preserving high Seebeck coefficient through adjusting Bi/Sb ratio, Bi0.46Sb1.54Te3 sample obtains the highest power factor of 3.90 mW m−1 K−2 at room temperature. Moreover, the microstructure is effectively modified by adjusting the linear speed of the copper roller, where the average grains size decreases gradually with the increasing speed of melting spinning (MS). The sample synthesized with the MS speed of 20 m/s possesses the widest distribution of grains size spanning from several nanometer to tens of micrometer, which scatters the phonons with wider range of mean free paths, resulting in the lowest lattice thermal conductivity of 0.64 W m−1 K−1 at 350 K. Benefitting from the decreased lattice thermal conductivity and enhanced power factor, a peak ZT value of around 1.2 is obtained at 350 K for the Bi0.46Sb1.54Te3 specimen with the MS speed of 20 m/s.

Journal

Journal of Solid State ChemistryElsevier

Published: Aug 1, 2018

References

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