Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution Article history: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by Received 30 September 2015 metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN Received in revised form 6 November 2015 gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis Accepted 6 November 2015 proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited Available online 12 November 2015 etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy Keywords: analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar N-polar GaN 17 −3 GaN film with a hole concentration of 2.4 × 10 cm was obtained by optimizing bis-cyclopentadienyl Wet etching magnesium flow rates. Strain © 2015 Elsevier B.V. All rights reserved. Doping 1. Introduction the hole concentration of N-polar GaN is much lower than that of Ga-polar GaN under the same growth condition [11]. We have III-Nitrides with their excellent optical properties have become succeeded in the growth http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

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Publisher
Elsevier
Copyright
Copyright © 2015 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2015.11.066
Publisher site
See Article on Publisher Site

Abstract

Article history: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by Received 30 September 2015 metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN Received in revised form 6 November 2015 gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis Accepted 6 November 2015 proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited Available online 12 November 2015 etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy Keywords: analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar N-polar GaN 17 −3 GaN film with a hole concentration of 2.4 × 10 cm was obtained by optimizing bis-cyclopentadienyl Wet etching magnesium flow rates. Strain © 2015 Elsevier B.V. All rights reserved. Doping 1. Introduction the hole concentration of N-polar GaN is much lower than that of Ga-polar GaN under the same growth condition [11]. We have III-Nitrides with their excellent optical properties have become succeeded in the growth

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2016

References

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