Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution Article history: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by Received 30 September 2015 metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN Received in revised form 6 November 2015 gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis Accepted 6 November 2015 proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited Available online 12 November 2015 etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy Keywords: analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar N-polar GaN 17 −3 GaN film with a hole concentration of 2.4 × 10 cm was obtained by optimizing bis-cyclopentadienyl Wet etching magnesium flow rates. Strain © 2015 Elsevier B.V. All rights reserved. Doping 1. Introduction the hole concentration of N-polar GaN is much lower than that of Ga-polar GaN under the same growth condition [11]. We have III-Nitrides with their excellent optical properties have become succeeded in the growth http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Loading next page...
 
/lp/elsevier/kinetic-limited-etching-of-magnesium-doping-nitrogen-polar-gan-in-ZUEyG8Oj2I
Publisher
Elsevier
Copyright
Copyright © 2015 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2015.11.066
Publisher site
See Article on Publisher Site

Abstract

Article history: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by Received 30 September 2015 metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN Received in revised form 6 November 2015 gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis Accepted 6 November 2015 proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited Available online 12 November 2015 etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy Keywords: analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar N-polar GaN 17 −3 GaN film with a hole concentration of 2.4 × 10 cm was obtained by optimizing bis-cyclopentadienyl Wet etching magnesium flow rates. Strain © 2015 Elsevier B.V. All rights reserved. Doping 1. Introduction the hole concentration of N-polar GaN is much lower than that of Ga-polar GaN under the same growth condition [11]. We have III-Nitrides with their excellent optical properties have become succeeded in the growth

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2016

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

Monthly Plan

  • Read unlimited articles
  • Personalized recommendations
  • No expiration
  • Print 20 pages per month
  • 20% off on PDF purchases
  • Organize your research
  • Get updates on your journals and topic searches

$49/month

Start Free Trial

14-day Free Trial

Best Deal — 39% off

Annual Plan

  • All the features of the Professional Plan, but for 39% off!
  • Billed annually
  • No expiration
  • For the normal price of 10 articles elsewhere, you get one full year of unlimited access to articles.

$588

$360/year

billed annually
Start Free Trial

14-day Free Trial