Ionic conduction and unipolar resistance switching in δ-phase Bi2O3 thin films

Ionic conduction and unipolar resistance switching in δ-phase Bi2O3 thin films •Switchable materials for memory is an active area of research in electronics.•We present a comprehensive study on the physical and device-level properties of delta-Bi2O3, an archetypal oxide-ion conductor that is also structurally metastable.•We show in this work that it is possible to realize both electronic- and ionic- dominated conduction in the low resistance phase by electric-field driven state switching from a nominally ionic conducting high resistance state.•We demonstrate this by combination of low temperature magnetotransport as well as impedance spectroscopy.•The results presented in this study contributes original physical insights into use of oxide fast-ion conductors in emerging memory technologies. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Solid-State Electronics Elsevier

Ionic conduction and unipolar resistance switching in δ-phase Bi2O3 thin films

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Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier Ltd
ISSN
0038-1101
eISSN
1879-2405
D.O.I.
10.1016/j.sse.2018.04.009
Publisher site
See Article on Publisher Site

Abstract

•Switchable materials for memory is an active area of research in electronics.•We present a comprehensive study on the physical and device-level properties of delta-Bi2O3, an archetypal oxide-ion conductor that is also structurally metastable.•We show in this work that it is possible to realize both electronic- and ionic- dominated conduction in the low resistance phase by electric-field driven state switching from a nominally ionic conducting high resistance state.•We demonstrate this by combination of low temperature magnetotransport as well as impedance spectroscopy.•The results presented in this study contributes original physical insights into use of oxide fast-ion conductors in emerging memory technologies.

Journal

Solid-State ElectronicsElsevier

Published: Aug 1, 2018

References

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