Integration scheme and 3D RC extractions of three-level supervia at 16 nm half-pitch

Integration scheme and 3D RC extractions of three-level supervia at 16 nm half-pitch A multi-level via or ‘supervia’ (SV) is considered as a scaling booster for the next technology nodes, as it may lower routing resistance and parasitic capacitance as compared to a conventional dual damascene (DD) via. In this paper, we present a three-level SV integration scheme at 16 nm half-pitch along with its 3-D RC extraction. 3-D interconnect geometries are modeled by means of process emulations, performed by using Synopsys' Sentaurus Process Explorer. The resistance of DD vias is also extracted for comparing with SV for various metal and barrier-liner (M-BL) combinations. The R extraction is done based on a resistivity model, calibrated to imec hardware and integrated into Synopsys' Raphael™ tool [1]. Simulations of SV structures with novel M-BL combinations show up to 60% resistance reduction for the investigated interconnect configurations with respect to the DD Cu-TaNCo reference (R = 105 Ω) at a total BL thickness of 3 nm. Furthermore, an approach to compare SV vs DD via capacitance is proposed, which suggests ~16% reduction in parasitic capacitance of SV schemes compared to DD schemes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronic Engineering Elsevier

Integration scheme and 3D RC extractions of three-level supervia at 16 nm half-pitch

Loading next page...
 
/lp/elsevier/integration-scheme-and-3d-rc-extractions-of-three-level-supervia-at-16-7xioiMC5n0
Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier B.V.
ISSN
0167-9317
eISSN
1873-5568
D.O.I.
10.1016/j.mee.2018.01.013
Publisher site
See Article on Publisher Site

Abstract

A multi-level via or ‘supervia’ (SV) is considered as a scaling booster for the next technology nodes, as it may lower routing resistance and parasitic capacitance as compared to a conventional dual damascene (DD) via. In this paper, we present a three-level SV integration scheme at 16 nm half-pitch along with its 3-D RC extraction. 3-D interconnect geometries are modeled by means of process emulations, performed by using Synopsys' Sentaurus Process Explorer. The resistance of DD vias is also extracted for comparing with SV for various metal and barrier-liner (M-BL) combinations. The R extraction is done based on a resistivity model, calibrated to imec hardware and integrated into Synopsys' Raphael™ tool [1]. Simulations of SV structures with novel M-BL combinations show up to 60% resistance reduction for the investigated interconnect configurations with respect to the DD Cu-TaNCo reference (R = 105 Ω) at a total BL thickness of 3 nm. Furthermore, an approach to compare SV vs DD via capacitance is proposed, which suggests ~16% reduction in parasitic capacitance of SV schemes compared to DD schemes.

Journal

Microelectronic EngineeringElsevier

Published: May 5, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off