Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser... The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) without any interlayer, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films of ∼320nm-thick exhibit very smooth surface without any particles and grains with the root-mean-square surface roughness of 2.3nm measured by atomic force microscopy. The relatively high crystalline quality is confirmed by the smaller full-width at half maximum values of GaN(0002) and GaN(101¯2) X-ray rocking curves as 0.27° and 0.68°, respectively. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

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Publisher
Elsevier
Copyright
Copyright © 2016 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2016.02.044
Publisher site
See Article on Publisher Site

Abstract

The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) without any interlayer, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films of ∼320nm-thick exhibit very smooth surface without any particles and grains with the root-mean-square surface roughness of 2.3nm measured by atomic force microscopy. The relatively high crystalline quality is confirmed by the smaller full-width at half maximum values of GaN(0002) and GaN(101¯2) X-ray rocking curves as 0.27° and 0.68°, respectively.

Journal

Applied Surface ScienceElsevier

Published: Apr 30, 2016

References

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