Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Effect of capping procedure on quantum dot morphology: Implications on optical properties and... InAs/GaAs quantum dot solar cell structures have been grown by metal organic vapor phase epitaxy, using partial capping of the quantum dots plus a subsequent thermal anneal. The optical characteristics of the InAs quantum dot layers have been studied as a function of the GaAs capping layer thickness and annealing temperature. We observe that a thinner capping layer and a higher annealing temperature result in lower non-radiative defect density and in improved quantum dot size homogeneity, leading to intense and sharp photoluminescence emission at low temperatures. We use an effective mass approximation model to correlate the photoluminescence emission characteristics to the quantum dot composition and dimensions. The resulting InAs/GaAs intermediate band solar cells show the best performance for the case of a 3 nm thick capping layer and annealing at 700 °C. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Solar Energy Materials and Solar Cells Elsevier

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

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Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier B.V.
ISSN
0927-0248
D.O.I.
10.1016/j.solmat.2018.01.028
Publisher site
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Abstract

InAs/GaAs quantum dot solar cell structures have been grown by metal organic vapor phase epitaxy, using partial capping of the quantum dots plus a subsequent thermal anneal. The optical characteristics of the InAs quantum dot layers have been studied as a function of the GaAs capping layer thickness and annealing temperature. We observe that a thinner capping layer and a higher annealing temperature result in lower non-radiative defect density and in improved quantum dot size homogeneity, leading to intense and sharp photoluminescence emission at low temperatures. We use an effective mass approximation model to correlate the photoluminescence emission characteristics to the quantum dot composition and dimensions. The resulting InAs/GaAs intermediate band solar cells show the best performance for the case of a 3 nm thick capping layer and annealing at 700 °C.

Journal

Solar Energy Materials and Solar CellsElsevier

Published: May 1, 2018

References

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