Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its nano-FET performance

Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its... Density functional theory (DFT) combined with non-equilibrium Green's function (NEGF) formalism is performed to explore electronic properties (geometrical stability, band structure and density of states) and quantum transport properties (transmission spectrum and I–V characteristics) of armchair germanene nanoribbon (AGeNR) doped with various elements, such as Ga, In, Tl, As, Sb and Bi. A negative differential resistance is observed for each doped AGeNR. Our results indicate that the indium (In) atom doped AGeNR is the most geometrically stable structure and provides a maximum peak to valley current ratio (Ip/Iv = 1.95). Further, In atom doped AGeNR is proposed for field effect transistor (AGeNR-FET) formation using the high dielectric constant value of hafnium dioxide (HfO2 = 25) at different applied gate voltages (−0.5 V–0.5 V). Finally, AGeNR-FET parameters are also calculated which shows high transconductance i.e. 56,196.3 nΩ−1, high charge mobility i.e. 2.6 × 104 cm2 V−1 s−1 and low subthreshold swing i.e. 39.39 mV/decade. Our findings have great application in digital devices and memory devices, and high frequency applications for future nanoelectronics and nanodevices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Organic Electronics Elsevier

Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its nano-FET performance

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Publisher
Elsevier
Copyright
Copyright © 2017 Elsevier Ltd
ISSN
1566-1199
D.O.I.
10.1016/j.orgel.2017.12.039
Publisher site
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Abstract

Density functional theory (DFT) combined with non-equilibrium Green's function (NEGF) formalism is performed to explore electronic properties (geometrical stability, band structure and density of states) and quantum transport properties (transmission spectrum and I–V characteristics) of armchair germanene nanoribbon (AGeNR) doped with various elements, such as Ga, In, Tl, As, Sb and Bi. A negative differential resistance is observed for each doped AGeNR. Our results indicate that the indium (In) atom doped AGeNR is the most geometrically stable structure and provides a maximum peak to valley current ratio (Ip/Iv = 1.95). Further, In atom doped AGeNR is proposed for field effect transistor (AGeNR-FET) formation using the high dielectric constant value of hafnium dioxide (HfO2 = 25) at different applied gate voltages (−0.5 V–0.5 V). Finally, AGeNR-FET parameters are also calculated which shows high transconductance i.e. 56,196.3 nΩ−1, high charge mobility i.e. 2.6 × 104 cm2 V−1 s−1 and low subthreshold swing i.e. 39.39 mV/decade. Our findings have great application in digital devices and memory devices, and high frequency applications for future nanoelectronics and nanodevices.

Journal

Organic ElectronicsElsevier

Published: Mar 1, 2018

References

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