Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate

Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate Article history: The near sub-wavelength and deep sub-wavelength ripples on monocrystalline silicon were formed in Received 5 June 2015 air by using linearly polarized and high repetition rate femtosecond laser pulses (f = 76 MHz,  = 800 nm, Received in revised form = 50 fs). The effects of laser pulse energy, direct writing speed and laser polarization on silicon surface 26 September 2015 morphology are studied. When the laser pulse energy is 2 nJ/pulse and the direct writing speed varies Accepted 8 November 2015 from 10 to 25 mm/s, the near sub-wavelength ripples (NSRs) with orientation perpendicular to the laser Available online 14 November 2015 polarization are generated. While the direct writing speed reaches 30 mm/s, the direction of the obtained deep sub-wavelength ripples (DSRs) suddenly changes and becomes parallel to the laser polarization, Keywords: rarely reported so far for femtosecond laser irradiation of silicon. Meanwhile, we extend the Sipe–Drude Laser-induced periodic surface structures interference theory by considering the thermal excitation, and numerically calculate the efficacy factor (LIPSSs) for silicon irradiated by femtosecond laser pulses. The revised Sipe–Drude interference theoretical results Near sub-wavelength ripples Deep sub-wavelength ripples show good agreement with the periods and orientations of sub-wavelength ripples. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate

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Publisher
Elsevier
Copyright
Copyright © 2015 Elsevier B.V.
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2015.11.082
Publisher site
See Article on Publisher Site

Abstract

Article history: The near sub-wavelength and deep sub-wavelength ripples on monocrystalline silicon were formed in Received 5 June 2015 air by using linearly polarized and high repetition rate femtosecond laser pulses (f = 76 MHz,  = 800 nm, Received in revised form = 50 fs). The effects of laser pulse energy, direct writing speed and laser polarization on silicon surface 26 September 2015 morphology are studied. When the laser pulse energy is 2 nJ/pulse and the direct writing speed varies Accepted 8 November 2015 from 10 to 25 mm/s, the near sub-wavelength ripples (NSRs) with orientation perpendicular to the laser Available online 14 November 2015 polarization are generated. While the direct writing speed reaches 30 mm/s, the direction of the obtained deep sub-wavelength ripples (DSRs) suddenly changes and becomes parallel to the laser polarization, Keywords: rarely reported so far for femtosecond laser irradiation of silicon. Meanwhile, we extend the Sipe–Drude Laser-induced periodic surface structures interference theory by considering the thermal excitation, and numerically calculate the efficacy factor (LIPSSs) for silicon irradiated by femtosecond laser pulses. The revised Sipe–Drude interference theoretical results Near sub-wavelength ripples Deep sub-wavelength ripples show good agreement with the periods and orientations of sub-wavelength ripples.

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2016

References

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