To mitigate temperature overshoot and dissipate highly concentrated heat from high-power electronic components, it is important to develop an ultrathin vapor chamber/heat spreader to fit in a compact 3D electronic system. As a semiconductor material, silicon is highly thermal conductive, micromachinable and process-compatible with microelectronic manufactures. Thus, a silicon based vapor chamber (SVC) can be directly integrated with microelectronic devices to achieve hot spot cooling, without introducing an additional thermal interface. This article reports the development of SVC, stating from analysis of structural safety, followed by numerical simulations of the liquid and vapor flows. Advanced multiscale wick structures are implemented to balance the heat and mass transports of high heat flux under a gravitational force. On these bases, SVC with structural reinforcement of a 13 × 8 pillar array is developed through a triple bonding approach. The successful development of the SVCs results in a large scale (50 mm × 70 mm) and ultrathin (1 mm thick) phase change heat transfer device, with the effective density less than 1.5 × 103 kg/m3. Using water as the operating fluid, we experimentally demonstrate a high effective thermal conductivity over 10,000 W/m⋅K in both 1D and 2D heat transfer modes.
Applied Thermal Engineering – Elsevier
Published: Jun 5, 2016
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