Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic... Article history: The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs Received 13 June 2017 surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, Received in revised form 24 July 2017 it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during Accepted 1 August 2017 the process and to understand and quantify the growth kinetics of GaAs nitridation under different condi- Available online 2 August 2017 tions. Nitridation of the cleaned GaAs substrate was performed using N plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is car- Keywords: ried out to determine the chemical environments of the Ga, As and N atoms and the composition depth Angle-resolved X-ray photoelectron profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, spectroscopy (AR-XPS) the temperature and time treatment have been investigated and show a significant impact on the forma- Density functional theory (DFT) tion of the GaN layer. The second approach is a refined growth kinetic model which better describes the Growth kinetic model Surface http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Surface Science Elsevier

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

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Publisher
Elsevier
Copyright
Copyright © 2017 Elsevier Ltd
ISSN
0169-4332
eISSN
1873-5584
D.O.I.
10.1016/j.apsusc.2017.08.002
Publisher site
See Article on Publisher Site

Abstract

Article history: The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs Received 13 June 2017 surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, Received in revised form 24 July 2017 it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during Accepted 1 August 2017 the process and to understand and quantify the growth kinetics of GaAs nitridation under different condi- Available online 2 August 2017 tions. Nitridation of the cleaned GaAs substrate was performed using N plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is car- Keywords: ried out to determine the chemical environments of the Ga, As and N atoms and the composition depth Angle-resolved X-ray photoelectron profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, spectroscopy (AR-XPS) the temperature and time treatment have been investigated and show a significant impact on the forma- Density functional theory (DFT) tion of the GaN layer. The second approach is a refined growth kinetic model which better describes the Growth kinetic model Surface

Journal

Applied Surface ScienceElsevier

Published: Jan 1, 2018

References

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