Article history: The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs Received 13 June 2017 surfaces can be reduced by depositing GaN ultra-thin ﬁlms on GaAs. To further improve this passivation, Received in revised form 24 July 2017 it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during Accepted 1 August 2017 the process and to understand and quantify the growth kinetics of GaAs nitridation under different condi- Available online 2 August 2017 tions. Nitridation of the cleaned GaAs substrate was performed using N plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is car- Keywords: ried out to determine the chemical environments of the Ga, As and N atoms and the composition depth Angle-resolved X-ray photoelectron proﬁle of the GaN thin ﬁlm which allow us to summarize the nitridation process in three steps. Moreover, spectroscopy (AR-XPS) the temperature and time treatment have been investigated and show a signiﬁcant impact on the forma- Density functional theory (DFT) tion of the GaN layer. The second approach is a reﬁned growth kinetic model which better describes the Growth kinetic model Surface
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