All-organic bipolar vertical transistor with sulfonated polyaniline base energy barriers favoring recombination emitter-collector current

All-organic bipolar vertical transistor with sulfonated polyaniline base energy barriers favoring... We report the development and characterization of an all-organic vertical transistor, with tris(8-hydroxyquinoline) aluminum (Alq3) as emitter, poly(bithiophene) (PBT), as collector material and a sulfonated polyaniline (SPAN) layer as base material in the structure Au/PBT/SPAN/Alq3/CsO/Al. A thin cesium oxide (CsO) layer provides improved electron injection from the Al into the Alq3. The transistor is operated in the usual common-emitter mode were the output characteristic evidences the modulation of the collector current through the applied voltage, showing common-emitter gain of 160 at 4.5 V. The incremented gain is due to an increased recombination current, consequence of the arrangement of the frontier orbitals of PBT, SPAN and Alq3, which favors the confinement of electrons and holes in the SPAN layer. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Organic Electronics Elsevier

All-organic bipolar vertical transistor with sulfonated polyaniline base energy barriers favoring recombination emitter-collector current

Loading next page...
 
/lp/elsevier/all-organic-bipolar-vertical-transistor-with-sulfonated-polyaniline-jDi5sjrqBV
Publisher
Elsevier
Copyright
Copyright © 2017 Elsevier Ltd
ISSN
1566-1199
D.O.I.
10.1016/j.orgel.2017.12.032
Publisher site
See Article on Publisher Site

Abstract

We report the development and characterization of an all-organic vertical transistor, with tris(8-hydroxyquinoline) aluminum (Alq3) as emitter, poly(bithiophene) (PBT), as collector material and a sulfonated polyaniline (SPAN) layer as base material in the structure Au/PBT/SPAN/Alq3/CsO/Al. A thin cesium oxide (CsO) layer provides improved electron injection from the Al into the Alq3. The transistor is operated in the usual common-emitter mode were the output characteristic evidences the modulation of the collector current through the applied voltage, showing common-emitter gain of 160 at 4.5 V. The incremented gain is due to an increased recombination current, consequence of the arrangement of the frontier orbitals of PBT, SPAN and Alq3, which favors the confinement of electrons and holes in the SPAN layer.

Journal

Organic ElectronicsElsevier

Published: Mar 1, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off