•Growth of non-defective few layer graphene on Rh(111) substrates using an ambient- pressure CVD method.•Control of graphene stacking order via the cool-down rate.•Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down.•Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(111) single crystal.
Applied Surface Science – Elsevier
Published: Apr 30, 2016
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