A SPICE model of silicon tunneling field-effect transistors

A SPICE model of silicon tunneling field-effect transistors In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronic Engineering Elsevier

A SPICE model of silicon tunneling field-effect transistors

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Publisher
Elsevier
Copyright
Copyright © 2018 Elsevier B.V.
ISSN
0167-9317
eISSN
1873-5568
D.O.I.
10.1016/j.mee.2018.01.028
Publisher site
See Article on Publisher Site

Abstract

In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.

Journal

Microelectronic EngineeringElsevier

Published: May 5, 2018

References

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