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J. Bonse, S. Baudach, J. Krüger, W. Kautek, M. Lenzner (2002)
Femtosecond laser ablation of silicon–modification thresholds and morphologyApplied Physics A, 74
S. Ashitkov, A. Ovchinnikov, M. Agranat (2004)
Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulsesJournal of Experimental and Theoretical Physics Letters, 79
W. Kautek, J. Krüger, M. Lenzner, S. Sartania, C. Spielmann, F. Krausz (1996)
Laser ablation of dielectrics with pulse durations between 20 fs and 3 psApplied Physics Letters, 69
X. Liu, D. Du, G. Mourou (1997)
Laser ablation and micromachining with ultrashort laser pulsesIEEE Journal of Quantum Electronics, 33
J. Reintjes, J. McGroddy (1973)
Indirect Two-Photon Transitions in Si at 1.06 μmPhysical Review Letters, 30
Jie Zhang, K. Sugioka, Toru Takahashi, K. Toyoda, K. Midorikawa (2000)
Dual-beam ablation of fused silica by multiwavelength excitation process using KrF excimer and F2 lasersApplied Physics A, 71
K. Obata, K. Sugioka, T. Akane, N. Aoki, K. Toyoda, K. Midorikawa (2001)
Influence of laser fluence and irradiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation processApplied Physics A, 73
M. Perry, B. Stuart, P. Banks, M. Feit, V. Yanovsky, A. Rubenchik (1999)
Ultrashort-pulse laser machining of dielectric materialsJournal of Applied Physics, 85
Jie Zhang, K. Sugioka, S. Wada, H. Tashiro, K. Toyoda (1997)
Dual-beam ablation of fused quartz using 266 nm and VUV lasers with different delay-timesApplied Physics A, 64
S. Klimentov, S. Garnov, T. Kononenko, V. Konov, P. Pivovarov, F. Dausinger (1999)
High rate deep channel ablative formation by picosecond–nanosecond combined laser pulsesApplied Physics A, 69
R. Stoian, S. Winkler, M. Hildebrand, M. Boyle, A. Thoss, M. Spyridaki, E. Koudoumas, N. Bulgakova, A. Rosenfeld, P. Tzanetakis, C. Fotakis, I. Hertel (2003)
Temporal Pulse Shaping and Optimization in Ultrafast Laser Ablation of Materials, 780
H. Toenshoff, A. Ostendorf, N. Baersch (2002)
Processing of semiconductors with femtosecond lasers, 4760
We present ablation results of silicon obtained by simultaneous irradiation of the sample with the fundamental beam of a picosecond-neodymium-vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small amount of second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a ‘seeding’ of the target area with free carriers by the 532 nm radiation.
Applied Physics A: Materials Science Processing – Springer Journals
Published: Sep 1, 2005
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