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- Publisher
- SPIE
- Copyright
- COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
- ISSN
- 0277-786X
- eISSN
- 1996-756X
- DOI
- 10.1117/12.2017333
- Publisher site
- See Article on Publisher Site
Abstract
In this paper we report on the high temperature compatibility of various adhesion layers for plat inum (Pt ) thin films. Weinvestigated different adhesion layers, such as titanium (Ti), tantalum (Ta), aluminium nitride (AlN), aluminium oxide(Al2O3) and titanium oxide (TiO2). All films were deposited on SiO2/Si substrate by using the sputter technique. Afterdeposition the films were annealed in air at 800C for different time lengths up to 16 h ours. After annealing, Al2O3 andTiO2 showed a dense oxide layer between Pt and SiO2/Si and they seem to be suitable as adhesion layers for Pt at hightemperatures. AlN is not suitable as adhesion layer for Pt at high temperatures. Ti and Ta are also not suitable for hightemperatures, diffusing strongly into Pt layers and leading to the format ion of oxide precipitates (TiOx or TaOx) in the Ptgrain boundaries. In addition, the format ion of Pt-crystallites (hillocks) on the surface was common in all the films.
Journal
Proceedings of SPIE – SPIE
Published: May 17, 2013