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Handbook of X‐ray Photoelectron Spectroscopy C. D. Wanger, W. M. Riggs, L. E. Davis, J. F. Moulder and G. E.Muilenberg Perkin‐Elmer Corp., Physical Electronics Division, Eden Prairie, Minnesota, USA, 1979. 190 pp. $195

Handbook of X‐ray Photoelectron Spectroscopy C. D. Wanger, W. M. Riggs, L. E. Davis, J. F.... This handbook is a companion volume to the popular Handbook of Auger Electron Spectroscopy. Again the principal aim is to provide wide scan spectra for each element in the periodic table and in doing this the book provides a unique collection of data, presented in the best possible way. Most spectra are excited by Mg Ka,some (for no obvious reason) by A1 Ka. Expanded spectra of principal Auger series are presented in the majority of cases when these appear in a spectrum together with higher resolution spectra of the most intense photoelectron peak(s). Since chemical state identification from photoelectron peak ’shifts’ is an important part of XPS analytical technique each element scan is accompanied by binding energy data for that element in a variety of compounds. The individual data are referenced and the collection includes only data to which adequate charge referencing procedures had originally been applied, i.e. it is as reliable as can be expected from such a compilation. In some cases these data are also plotted against Auger peak positions in a ‘scatter plot’ of the type pioneered by one of the authors (Wagner), such that ‘Auger parameters’ for these compounds emerge. This number is extremely useful in speciation since it is independent of static charging. The first 26 pages are dedicated to a brief, but fairly comprehensive, introduction to the principles of XPS, sample preparation and experimental techniques, data interpretation and chemical state identification. At the end of the book an Appendix of five tables gives photoelectron peak positions for each element and in order of energy, both for Mg K a and A1 Ka excitation, plus atomic sensitivity factors. As XPS moves rapidly into the ‘mature technique’ phase with non-specialized operators becoming more common, the need for such a data compilation is self-evident. The presentation has been well thought out and the artwork is superb. However, the brief section on principles is only a cursory introduction and a great service could have been done for newcomers by providing references to more detailed review articles appropriate to each section. Being unique it is hard to assess value for money in this book. It is expensive by any standard, but I am informed the cost of running the spectra at commercial rates was included in the production cost! However,, the price pales into insignificance compared with the time saving of costly instrument/operator time which this book will allow and in my view this should be the criterion of judgement. D. BRIGGS ICI Petrochemicals & Plastics Division, Welwyn Garden City, UK Forthcoming Meetings 11-16 OCTOBER 1981 Symposium on Surface and Thin Film Analysis of Semiconductor Materials (Electrochemical Society Meeting), Denver, Colorado, USA. The symposium will deal with the application of AES, XPS, SIMS, ISS, Rutherford back scattering and other methods to semiconductor material studies. Analyses involving laser Raman spectroscopy, scanning acoustic microscopy and sputter induced photon spectroscopy would be particularly welcome. Further information may be obtained from : G . B. Larrabee, Texas Instruments Inc., PO Box 255936, MS 147,Dallas, Texas 75265, USA; or A. E. Morgan, Signetics Corp., MS065, 811 East Arques Avenue, Sunnyvale, California 94086, USA. measurements from AES, XPS and SIMS, in conjunction with ion sputtering, to the true microchemical description of the original sample. It is planned to hold an instrument exhibition concurrent with the conference. The closing date for contributions is 1 September 1981. Further information may be obtained from : Dr C. Lea, Division of Chemical Standards, National Physical Laboratory, Teddington, Middlesex TW11 OLW, UK. Extended abstracts (two typewritten pages, in English) should be submitted not later than 1November 1981. Further information may be obtained from : Dr P. Grange, Groupe de Physico-chimie Minerale et de Catalyse, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium. Product News ~~ 6-9 SEPTEMBER1982 24-25 NOVEMBER 1981 Conference on Quantitative Surface Analysis, Teddington, UK. This conference will emphasize surface chemical state information and will provide an up to date view of the state of knowledge for all parameters needed to relate 3rd International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, Louvain-laNeuve, Belgium. All general and novel methods of catalyst preparation will be considered including carriers, influence of particle properties, pretreatment and stabilization, and regeneration. A session will be devoted to standardization. However, deactivation and anchoring o transition metal complexes f will be excluded. Laser Ion Mass Analyser Cambridge Consultants Ltd have constructed a LIMA which offers ppm sensitivity for an atomic mass range of 1-500, and an analysis period of 100 p. This sensitivity is obtainable for all elements (including hydrogen) and the system is suitable for use with bulk or thin film samples, e.g. geological specimens, semiconductors and metals during testing. Further information is available from Cambridge Consultants Ltd, The Science Park, Milton Road, Cambridge CB4 4DW. UK. SURFACE AND INTERFACE ANALYSIS, VOL. 3, NO. 4, 1981 v http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Surface and Interface Analysis Wiley

Handbook of X‐ray Photoelectron Spectroscopy C. D. Wanger, W. M. Riggs, L. E. Davis, J. F. Moulder and G. E.Muilenberg Perkin‐Elmer Corp., Physical Electronics Division, Eden Prairie, Minnesota, USA, 1979. 190 pp. $195

Surface and Interface Analysis , Volume 3 (4) – Aug 1, 1981

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Publisher
Wiley
Copyright
Copyright © 1981 Heyden & Son Ltd.
ISSN
0142-2421
eISSN
1096-9918
DOI
10.1002/sia.740030412
Publisher site
See Article on Publisher Site

Abstract

This handbook is a companion volume to the popular Handbook of Auger Electron Spectroscopy. Again the principal aim is to provide wide scan spectra for each element in the periodic table and in doing this the book provides a unique collection of data, presented in the best possible way. Most spectra are excited by Mg Ka,some (for no obvious reason) by A1 Ka. Expanded spectra of principal Auger series are presented in the majority of cases when these appear in a spectrum together with higher resolution spectra of the most intense photoelectron peak(s). Since chemical state identification from photoelectron peak ’shifts’ is an important part of XPS analytical technique each element scan is accompanied by binding energy data for that element in a variety of compounds. The individual data are referenced and the collection includes only data to which adequate charge referencing procedures had originally been applied, i.e. it is as reliable as can be expected from such a compilation. In some cases these data are also plotted against Auger peak positions in a ‘scatter plot’ of the type pioneered by one of the authors (Wagner), such that ‘Auger parameters’ for these compounds emerge. This number is extremely useful in speciation since it is independent of static charging. The first 26 pages are dedicated to a brief, but fairly comprehensive, introduction to the principles of XPS, sample preparation and experimental techniques, data interpretation and chemical state identification. At the end of the book an Appendix of five tables gives photoelectron peak positions for each element and in order of energy, both for Mg K a and A1 Ka excitation, plus atomic sensitivity factors. As XPS moves rapidly into the ‘mature technique’ phase with non-specialized operators becoming more common, the need for such a data compilation is self-evident. The presentation has been well thought out and the artwork is superb. However, the brief section on principles is only a cursory introduction and a great service could have been done for newcomers by providing references to more detailed review articles appropriate to each section. Being unique it is hard to assess value for money in this book. It is expensive by any standard, but I am informed the cost of running the spectra at commercial rates was included in the production cost! However,, the price pales into insignificance compared with the time saving of costly instrument/operator time which this book will allow and in my view this should be the criterion of judgement. D. BRIGGS ICI Petrochemicals & Plastics Division, Welwyn Garden City, UK Forthcoming Meetings 11-16 OCTOBER 1981 Symposium on Surface and Thin Film Analysis of Semiconductor Materials (Electrochemical Society Meeting), Denver, Colorado, USA. The symposium will deal with the application of AES, XPS, SIMS, ISS, Rutherford back scattering and other methods to semiconductor material studies. Analyses involving laser Raman spectroscopy, scanning acoustic microscopy and sputter induced photon spectroscopy would be particularly welcome. Further information may be obtained from : G . B. Larrabee, Texas Instruments Inc., PO Box 255936, MS 147,Dallas, Texas 75265, USA; or A. E. Morgan, Signetics Corp., MS065, 811 East Arques Avenue, Sunnyvale, California 94086, USA. measurements from AES, XPS and SIMS, in conjunction with ion sputtering, to the true microchemical description of the original sample. It is planned to hold an instrument exhibition concurrent with the conference. The closing date for contributions is 1 September 1981. Further information may be obtained from : Dr C. Lea, Division of Chemical Standards, National Physical Laboratory, Teddington, Middlesex TW11 OLW, UK. Extended abstracts (two typewritten pages, in English) should be submitted not later than 1November 1981. Further information may be obtained from : Dr P. Grange, Groupe de Physico-chimie Minerale et de Catalyse, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium. Product News ~~ 6-9 SEPTEMBER1982 24-25 NOVEMBER 1981 Conference on Quantitative Surface Analysis, Teddington, UK. This conference will emphasize surface chemical state information and will provide an up to date view of the state of knowledge for all parameters needed to relate 3rd International Symposium on Scientific Bases for the Preparation of Heterogeneous Catalysts, Louvain-laNeuve, Belgium. All general and novel methods of catalyst preparation will be considered including carriers, influence of particle properties, pretreatment and stabilization, and regeneration. A session will be devoted to standardization. However, deactivation and anchoring o transition metal complexes f will be excluded. Laser Ion Mass Analyser Cambridge Consultants Ltd have constructed a LIMA which offers ppm sensitivity for an atomic mass range of 1-500, and an analysis period of 100 p. This sensitivity is obtainable for all elements (including hydrogen) and the system is suitable for use with bulk or thin film samples, e.g. geological specimens, semiconductors and metals during testing. Further information is available from Cambridge Consultants Ltd, The Science Park, Milton Road, Cambridge CB4 4DW. UK. SURFACE AND INTERFACE ANALYSIS, VOL. 3, NO. 4, 1981 v

Journal

Surface and Interface AnalysisWiley

Published: Aug 1, 1981

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