Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices

Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage... AbstractHow to effectively enhance the reliability robustness in high-voltage (HV) BCD [(bipolar) complementary metal-oxide semiconductor (CMOS) diffusion metaloxide semiconductor (DMOS)] processes is an important issue. Influences of layouttype dependences on anti-electrostatic discharge (ESD) robustness in a 0.25-μm 60-V process will be studied in this chapter, which includes, in part (1), the traditional striped-type n-channel lateral-diffused MOSFET (nLDMOS), waffle-type nLDMOS, and nLDMOS embedded with a “p-n-p”-arranged silicon-controlled rectifier (SCR) devices in the drain side; and in part (2) a p-channel LDMOS (pLDMOS) with an embedded “p-n-p-n-p”-arranged-type SCR in the drain side (diffusion regions of the drain side is P+-N+-P+-N+-P+). Then, these LDMOS devices are used to evaluate the influence of layout architecture on trigger voltage (Vt1), holding voltage (Vh), and secondary breakdown current (It2). Eventually, the sketching of the layout pattern of a HV LDMOS is a very important issue in the anti-ESD consideration. Also, in part (1), the waffle-type nLDMOS DUT contributes poorly to It2 robustness due to the non-uniform turned-on phenomenon and a narrow channel width per unit finger. Therefore, the It2 robustness of a waffle-type nLDMOS device is decreased about 17% as compared to a traditional striped-type nLDMOS device (reference DUT-1). The ESD abilities of traditional stripedtype and waffle-type nLDMOS devices with an embedded SCR (“p-n-p”-manner arrangement in the drain side) are better than a traditional nLDMOS 224.4% in average. Noteworthy, the nLDMOS-SCR with the “p-n-p” -arranged-type in the drainend is a good structure for the anti-ESD reliability especially in HV usages. Furthermore, in part (2) this layout manner of P+ discrete-island distributions in the drain-side have some impacts on the anti-ESD and anti-latch-up (LU) immunities. All of their It2 values have reached above 6 A; however, the major repercussion is that the Vh value will be decreased about 66.7 ~ 73.7%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Sciences Reviews de Gruyter

Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices

Loading next page...
 
/lp/degruyter/impacts-of-esd-reliability-by-different-layout-engineering-in-the-0-25-Pre90EBZXi
Publisher
De Gruyter
Copyright
© 2018 Walter de Gruyter GmbH, Berlin/Boston
ISSN
2365-6581
eISSN
2365-659X
D.O.I.
10.1515/psr-2016-0016
Publisher site
See Article on Publisher Site

Abstract

AbstractHow to effectively enhance the reliability robustness in high-voltage (HV) BCD [(bipolar) complementary metal-oxide semiconductor (CMOS) diffusion metaloxide semiconductor (DMOS)] processes is an important issue. Influences of layouttype dependences on anti-electrostatic discharge (ESD) robustness in a 0.25-μm 60-V process will be studied in this chapter, which includes, in part (1), the traditional striped-type n-channel lateral-diffused MOSFET (nLDMOS), waffle-type nLDMOS, and nLDMOS embedded with a “p-n-p”-arranged silicon-controlled rectifier (SCR) devices in the drain side; and in part (2) a p-channel LDMOS (pLDMOS) with an embedded “p-n-p-n-p”-arranged-type SCR in the drain side (diffusion regions of the drain side is P+-N+-P+-N+-P+). Then, these LDMOS devices are used to evaluate the influence of layout architecture on trigger voltage (Vt1), holding voltage (Vh), and secondary breakdown current (It2). Eventually, the sketching of the layout pattern of a HV LDMOS is a very important issue in the anti-ESD consideration. Also, in part (1), the waffle-type nLDMOS DUT contributes poorly to It2 robustness due to the non-uniform turned-on phenomenon and a narrow channel width per unit finger. Therefore, the It2 robustness of a waffle-type nLDMOS device is decreased about 17% as compared to a traditional striped-type nLDMOS device (reference DUT-1). The ESD abilities of traditional stripedtype and waffle-type nLDMOS devices with an embedded SCR (“p-n-p”-manner arrangement in the drain side) are better than a traditional nLDMOS 224.4% in average. Noteworthy, the nLDMOS-SCR with the “p-n-p” -arranged-type in the drainend is a good structure for the anti-ESD reliability especially in HV usages. Furthermore, in part (2) this layout manner of P+ discrete-island distributions in the drain-side have some impacts on the anti-ESD and anti-latch-up (LU) immunities. All of their It2 values have reached above 6 A; however, the major repercussion is that the Vh value will be decreased about 66.7 ~ 73.7%.

Journal

Physical Sciences Reviewsde Gruyter

Published: Feb 23, 2018

There are no references for this article.

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off