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Abstract Diamond films were synthesized in a CH 4 -H 2 system with good surface quality by adjusting the additive amount of argon and oxygen gas. The diamond phase content and surface roughness of samples are 86.1% and 81.5 nm, respectively. The results indicate that only Ar addition will decrease the purity of diamond films, whereas Ar-O 2 mixed gas can further increase the diamond phase content. It is worth noting that the content of diamond phase has no significant increase when O 2 flow exceed 1 sccm. The surface roughness reduced from 199.8 to 81.5 nm by the addition of 14 sccm Ar and 1 sccm O 2 , and the surface quality will be deteriorated in case of further increasing O 2 or decreasing Ar concentration. Meanwhile, the growth rate under different conditions and the synergetic surface modification effect of Ar-O 2 mixed gas for diamond films growth process were discussed.
Green Processing and Synthesis – de Gruyter
Published: Jun 1, 2016
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