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Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium <jats:sec> <jats:title content-type="abstract-subheading">Purpose</jats:title> <jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title> <jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Findings</jats:title> <jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Originality/value</jats:title> <jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p> </jats:sec> http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International CrossRef

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

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Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium


Abstract

<jats:sec>
<jats:title content-type="abstract-subheading">Purpose</jats:title>
<jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title>
<jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Findings</jats:title>
<jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Originality/value</jats:title>
<jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p>
</jats:sec>

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Publisher
CrossRef
ISSN
1356-5362
DOI
10.1108/mi-12-2015-0099
Publisher site
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Abstract

<jats:sec> <jats:title content-type="abstract-subheading">Purpose</jats:title> <jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title> <jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Findings</jats:title> <jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Originality/value</jats:title> <jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p> </jats:sec>

Journal

Microelectronics International – CrossRef

Published: May 2, 2017

References

  • First principles study of electronic and structural properties of the Ge/GeO2 interface
  • Interfacial properties of ALD deposited Al2O3/p-type Germanium MOS structures: influence of oxidized Ge interfacial layer dependent on Al2O3 Thickness
  • Theory of oxidation of metal
  • General relationship for the thermal oxidation of Silicon
  • Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on Insulator
  • Germanium FET and capacitors with rare earth CeO2/HfO2
  • Germanium based field – effect transistors: challenges and opportunities
  • HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release
  • Electrochemically deposited and etched membranes with precisely size micropores for biological fluid microfiltration
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  • The initial stages of oxidation of germanium
  • Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric
  • Thermal oxidation of Silicon in dry oxygen growth-rate enhancement in the thin regime
  • Evidence of low interface trap density in GeO2/Ge metal oxide semiconductor structure fabricated by thermal oxidation
  • Thermodynamic and kinetic oxidation of Ge in high pressure oxygen