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Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium <jats:sec> <jats:title content-type="abstract-subheading">Purpose</jats:title> <jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title> <jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Findings</jats:title> <jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Originality/value</jats:title> <jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p> </jats:sec> http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International CrossRef

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium


Abstract

<jats:sec>
<jats:title content-type="abstract-subheading">Purpose</jats:title>
<jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title>
<jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Findings</jats:title>
<jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p>
</jats:sec>
<jats:sec>
<jats:title content-type="abstract-subheading">Originality/value</jats:title>
<jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p>
</jats:sec>

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Publisher
CrossRef
ISSN
1356-5362
DOI
10.1108/mi-12-2015-0099
Publisher site
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Abstract

<jats:sec> <jats:title content-type="abstract-subheading">Purpose</jats:title> <jats:p>The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and Ge for HCl- and HF-last Ge surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Design/methodology/approach</jats:title> <jats:p>After wet chemical cleaning with HCl or HF, Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Findings</jats:title> <jats:p>It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl-last starting surface.</jats:p> </jats:sec> <jats:sec> <jats:title content-type="abstract-subheading">Originality/value</jats:title> <jats:p>The novelty of this work is to investigate the starting surface of Ge to IL growth between Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.</jats:p> </jats:sec>

Journal

Microelectronics InternationalCrossRef

Published: May 2, 2017

References