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SPCM: The Striped Phase Change Memory MORTEZA HOSEINZADEH and MOHAMMAD ARJOMAND, Sharif University of Technology HAMID SARBAZI-AZAD, Sharif University of Technology & Institute for Research in Fundamental Sciences (IPM) Phase Change Memory (PCM) devices are one of the known promising technologies to take the place of DRAM devices with the aim of overcoming the obstacles of reducing feature size and stopping ever growing amounts of leakage power. In exchange for providing high capacity, high density, and nonvolatility, PCM Multilevel Cells (MLCs) impose high write energy and long latency. Many techniques have been proposed to resolve these side effects. However, read performance issues are usually left behind the great importance of write latency, energy, and lifetime. In this article, we focus on read performance and improve the critical path latency of the main memory system. To this end, we exploit striping scheme by which multiple lines are grouped and lie on a single MLC line array. In order to achieve more performance gain, an adaptive ordering mechanism is used to sort lines in a group based on their read frequency. This scheme imposes large energy and lifetime overheads due to its intensive demand for higher write bandwidth. Thus, we
ACM Transactions on Architecture and Code Optimization (TACO) – Association for Computing Machinery
Published: Nov 16, 2015
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