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Condensed Matter
, Volume 2020 (1912) – Dec 22, 2019

/lp/arxiv-cornell-university/excellent-electronic-transport-in-heterostructures-of-graphene-and-IurwWA91sJ

- ISSN
- 2053-1583
- eISSN
- ARCH-3331
- DOI
- 10.1088/2053-1583/ab89e5
- Publisher site
- See Article on Publisher Site

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure 1, 2, 3 4, 5 5 4 3 1, 2 J. Sonntag, J. Li, A. Plaud, A. Loiseau, J. Barjon, J. H. Edgar, and C. Stampfer JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany Peter Grunb erg Institute (PGI-9), Forschungszentrum Julich, 52425 Julich, Germany Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, United States Groupe d'Etude de la Mati ere Condense (GEMaC), Universit e de Versailles St Quentin en Yvelines, CNRS, Universit e Paris Saclay, 78035 Versailles, France Laboratoire d'Etude des Microstructures (LEM), ONERA, CNRS, Universit e Paris-Saclay, 92322 Ch^ atillon, France (Dated: December 24, 2019) Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically puri ed BN crystals. We employ Raman spectroscopy, cathodo- luminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 m at low temperatures and electron-phonon scattering limited transport at room temperature. In recent years, a large number of two-dimensional clearly limited in its scalability. An alternative method (2D) materials have been discovered [1{6], investigated of growth using atmospheric pressure and high tempera- and used in rst prototype devices. These materials ture (APHT) [23{26] is not only more suitable for larger cover almost all types of dierent material classes, in- scales [26, 27], but furthermore allows for the easy control cluding metals, semimetals, semiconductors, insulators, of isotopic concentrations [28]. superconductors [7, 8], and even ferromagnets [9, 10]. In comparison to BN with the natural distribution of 10 11 However, the number of insulators is very limited since boron (19:9 % B and 80:1 % B), isotopically puri- up to now only hexagonal boron nitride (BN) is avail- ed BN exhibits a decrease in phonon-phonon scatter- able as a true 2D layered insulator. This gives hexagonal ing, leading to enhanced thermal transport [29{31] and BN a special signi cance in particular since most prop- to ultralow-loss polaritons [32], making monoisotopic BN erties of functional 2D materials - which consist only of interesting for nanophotonics. As the eective thermal surface atoms - are strongly in uenced by the direct en- management is one of the bottlenecks in nanoelectronics, vironment, making substrate materials and capping lay- monoisotopic BN is further a promising building block ers highly crucial for the eective material quality and for high performance and high-power electronic appli- device performance. Indeed, encapsulating 2D materi- cations, especially since the cooling can be further en- als in hexagonal BN opened the way for improving de- hanced by hyperbolic phonon polariton cooling [33{35]. vice performance [1{3, 11{13] and to thoroughly study- Furthermore, isotope puri cation modi es the electron ing the rich electronic, mechanical and optical proper- density distribution and the van der Waals interaction ties of 2D materials. For example, phenomena observed between layers [36], which could alter the characteristics in 2D materials thanks to the BN encapsulation range of the heterostructures, especially in regards to modi ca- from the fractional quantum Hall eect [14{16], the Hof- tions to the phonon band structure with possible impact stadter's butter y in moir e superlattices [17], charge den- on the electronic transport [37]. Thus the APHT grown sity waves [18], single photon emitters [19] and to super- monoisotopic BN is not only interesting for applications, conductivity in twisted bilayer graphene [20]. All these but also for fundamental research. However, so far there observations crucially rely on the material quality of the is not much known about the quality of this material encapsulating BN. So far the very best and most used with respect to its use for electronic devices based on hexagonal BN is produced via a high pressure high tem- heterostructures of graphene and such BN. perature (HPHT) process (> 30 kbar) [21], and is kindly Here we report on electronic transport measurements provided by T. Taniguchi and K. Watanabe to the ex- on heterostructures based on graphene encapsulated in tending 2D materials research community [22]. While the APHT grown monoisotopic BN [26, 28]. We assess the HPHT method produces BN of the highest quality, it is quality of the APHT grown monoisotopic BN via confo- arXiv:1912.10482v1 [cond-mat.mes-hall] 22 Dec 2019 2 -1 Energy (eV) Raman shift (cm ) (a) (b) (c) 1350 1400 6.0 5.5 5.0 4.5 4.0 3.5 11 nat. 1 BN BN T =10 K BN -1 2.9 cm -1 3.3 cm BN 500 µm (e) 10 11 BN BN/ BN 1350 1400 200 250 300 350 400 -1 Wavelength (nm) Raman shift (cm ) (d) (f) -1 1 10 15 20 25 30 35 10 Γ (cm ) 2D BN BN 30 LO TO LA TA 0 10 20 30 40 50 14 16 18 20 22 24 26 28 5.7 5.8 5.9 -1 x (μm) Energy (eV) Γ (cm ) 2D 11 10 11 FIG. 1. (a) Micrograph of a BN crystal. (b) Raman spectra of a heterostructure made from BN and BN, recorded at the positions displayed within the inset. Scale bar: 10 m. The black dashed line represents the Raman response from BN 10 11 with natural isotope concentrations grown via a APHT process. (c) Cathodoluminescence spectra for both BN and BN crystals, taken at T = 10 K with an acceleration voltage of 5 kV. (d) High resolution spectra of the phonon assisted exciton recombinations. (e) Distribution of the Raman 2D-peak width within a BN/graphene heterostructure with a maximum at < 16 cm . Inset: Optical image of a BN/graphene/BN heterostructure made with monoisotopic BN. The dashed lines 2D indicate the graphene ake. Scale bar: 20 m. (f ) Spatially resolved Raman map of the 2D-peak width . 2D cal Raman and cathodoluminescence spectroscopy mea- elements in the BN crystal originate from the owing N surements and we show that the graphene heterostruc- gas and that the natural distribution of nitrogen isotopes 10 11 14 tures { based on both BN and BN { exhibit excellent already consists of > 99:6 % N [38], creating an isotopi- electronic performance, absolutely equivalent to state-of- cally pure BN crystal. During the cool down (0.5 C/h) the-art heterostructures based on HPHT hexagonal BN. of the furnace the BN crystals precipitate on the metal At low temperature the charge carrier mobility is only surface. After removing the crystals from the metal sur- limited by the device size, fractional quantum Hall eect face (see Fig. 1), we prepare thin akes by exfoliating the appears below 14 T and magnetic focusing experiments crystals onto 285 nm SiO on silicon. allow to extract mean free paths very close to 10 m. We build heterostructures based on monoisotopic BN At room temperature the carrier mobility of all fabri- via dry-stacking of the individual akes [12]. A het- cated devices is only limited by electron-phonon scatter- 10 11 erostructure built from dierent isotopes BN and BN ing, even possibly outperforming present BN/graphene is shown as inset in Fig. 1(b). We characterize the het- devices, making this material highly interesting for ap- erostructures (both graphene and BN) via confocal Ra- plications that require ultra-high carrier mobilities. man spectroscopy [39, 40]. As seen in Fig. 1(b) we can The monoisotopic hexagonal boron nitride crystals clearly distinguish the in-plane E Raman mode of the 2g 1 1 were grown with the same metal ux method as reported two isotopes positioned at 1391:0 cm and 1355:2 cm 10 11 in Ref. [28]. In short, elemental boron powder with high for BN and BN respectively. The width of this peak 10 11 isotope purity (99:22 % B or 99:41 % B) are mixed is commonly used as a measure for the crystallinity of with nickel and chromium powder and placed into an BN [41]. In the highest quality HPHT grown BN crystals alumina crucible within an alumina tube furnace. Dur- with the natural distribution of boron the lowest width ing the growth process at 1550 C, a continuous ow observed is 7:3 cm [41], mainly broadened by isotopic of N and H gases at a constant pressure of 850 Torr disorder. Similarly, we observe a comparable width of 2 2 through the furnace is applied. Note that all the nitrogen 7:5 cm for natural BN grown with a APHT process (see Frequency (a.u.) y (μm) Raman intensity (a.u.) CL intensity (a.u.) CL intensity (a.u.) 2 ρ (kΩ) dσ /dV (e /(hV)) xx xy BG ρ (kΩ) (a) (b) Fig. 1(c). The radiative recombination of free excitons 10 11 0.15 dominates the CL spectra of both BN and BN exfo- 2 100 liated crystals with a maximum at 215 nm. The inten- 0.1 sity of luminescence signals related to structural defects (227 nm) and deep defects (broadbands near 300 nm) 0.05 remains much weaker than exciton signal (17.8 and 3.6 10 11 times lower for BN and BN), which indicates that the 0 0 quality of APHT BN crystals is close to HPHT ones [41]. -40 -20 0 20 40 1 10 100 The control of the boron isotopes results in a slight en- 9 -2 V (V) BG n (10 cm ) ergy shift for the series of narrow lines due to various (c) phonon modes, including longitudinal and transverse op- tical (LO, TO) and longitudinal and transverse acoustic (LA, TA) phonons, which assist the indirect exciton re- combination in BN, as seen in Fig. 1(d). The measured energies are consistent with previous observations [36] and con rm the good control of the isotope purity in the APHT crystals. To further show the high quality of the monoisotopic BN we build BN/graphene/BN heterostructures in which -40 -20 0 20 40 V (V) BG we use the graphene sheet as a sensitive detector for any (d) disorder within the BN. The inset of Fig. 1(e) shows such B = 13.8 T a heterostructure. To characterize the quality of the en- capsulated graphene we employ spatially resolved confo- cal Raman spectroscopy, see Figs. 1(e) and (f ). Besides some 'bubbles' within the heterostructure, resulting from -1 a "self-cleaning" mechanism of interfacially trapped hy- drocarbons [43], we observe a homogeneous Raman re- -2 sponse of pristine graphene. In particular, the width of 0 1 2 3 4 the 2D-peak is approximately 16 cm showing 2D Filling factor ν very little broadening due to strain variations [44]. As strain variations are the dominating scattering mecha- FIG. 2. Electrical transport on heterostructures built with nism in high-quality graphene devices this very low isotopically cleaned BN. (a) Electrical conductivity and re- 2D sistivity of a BN heterostructure as a function of applied indicates that these heterostructures promise high charge backgate voltage V at T = 1:7 K. (b) Double logarithmic BG carrier mobilities [45]. plot vs charge carrier density n for determining the charge carrier inhomogeneity n . The dashed lines indicate hole dop- The suitability of the monoisotopic BN as substrate ing. Inset: optical image of a nished device. Scale bar: 5 m. for high-performance graphene devices is examined with (c) Landau fan showing dierential conductance d=dV as BG BN/graphene/BN Hall bar devices fabricated via elec- a function of V and B. Landau level begin to form below BG tron beam lithography and reactive ion etching, see inset 0.5 T and the Landau level degeneracy starts to lift already of Fig. 2(b). In total we build one device from BN at approx. 2 T. (d) Quantized Hall voltage (red) and lon- xy and ve devices from BN, which all show similar elec- gitudinal resistance (blue) as a function of lling factor. xx tronic behavior. The BN thicknesses used in our devices Fractional lling factors = 1=3; 2=3; 4=3::: are indicated by dashed, gray lines. ranges from 20 nm to 90 nm. First, we characterize the electronic quality of the heterostructure at low tem- peratures via 4-point electrical transport measurements. dashed line in Fig. 1(b)). For the monoisotopic BN we ob- In Fig. 2(a) the conductivity and resistivity at 1.7 K 1 1 serve values of = 3:3 cm and = 2:9 cm . of the heterostructure built with BN is shown. The 10 11 BN BN This narrow width of the E mode indicates a high iso- charge neutrality point (CNP) indicated by a sharp in- 2g tope purity and a high crystal quality. crease of the resistance is very close to V = 0 V demon- BG For the characterization of high quality hBN crys- strating low doping and low charge carrier inhomogene- tals, information gained from Raman spectroscopy is ity. To quantify the charge carrier density inhomogene- limited and needs to be completed by luminescence ex- ity n , we employ a double logarithmic plot of against periments [41]. To this end, we record cathodolumi- the charge carrier density n, see Fig. 2(b). n is de ned nescence (CL) spectra at low temperature (T = 10 K) as the crossing point between two linear ts correspond- with an acceleration voltage of 5 kV and correct them ing to the saturation and (n) at high n. We nd min 9 2 for the spectral response of the detection system [42], see low inhomogeneities of n 6 10 cm ; a low value B (T) σ (1/Ω) σ (e /h) xy σ (e /h) 4 (a) (b) 12 -2 for BN-graphene heterostructures without graphite gates n=2.6x10 cm [43, 45{47]. 4 1 To further probe that the monoisotopic BN does not disturb sensitive quantum states we investigate 4 2 3 4 5 6 the quantum Hall eect in our BN-heterostructure. L (μm) Thanks to low n and a high carrier mobility of around 3 BN 6.1 μm 500:000 cm =(Vs), the integer quantum Hall eect 3 emerges at values below 1 T, see Fig. 2(c), while four-fold BN degeneracy lifting [48] already occurs at 2 T, showing 4.0 μm 2 11 BN -2 that electron-electron interactions are not masked by dis- 2.6 μm order. At higher magnetic elds additional quantum Hall -100 0 100 200 0 1 2 3 4 12 -2 plateaus occur at fractional lling factors. As can been n (10 cm ) B (mT) seen in Fig. 2(d), we observe fully quantized fractional (c) plateaus at llings of 2=3, 4=3, 5=3... at magnetic elds of 13.8 T in both the longitudinal resistivity and xx transversal conductivity . The = 1=3 plateau is not xy clearly visible in , possibly because of its proximity to xy the isolating = 0 state [14] and the constant bias volt- age measurement technique employed here. The well de- -1 veloped fractional quantum Hall states clearly show that R (Ω) -2 the monoisotopic BN is a suitable substrate to investigate -3 0 3 fragile quantum states within graphene and possibly in -200 -100 0 100 200 other 2D materials. B (mT) In Fig. 3(a) we show the charge carrier mobilities of 10 11 the BN device and two BN devices as function of n, FIG. 3. (a) Low temperature mobility as a function of n where the mobility is extracted from = =(en). We nd for dierent devices. The solid lines indicate the expected values above 500:000 cm =(Vs), which are only limited by mobility values for ballistic transport, see text for details. The 12 2 the dimensions of our devices, resulting in quasi-ballistic inset shows the mobilities at xed n = 2 10 cm for all transport. In the case of ballistic transport the mean free 6 devices. (b) Magnetic focusing of ballistic electrons. Non- local resistance as a function of magnetic eld at n = 2:8 path l = h=(2e n) is only restricted by the device 12 2 10 cm shows 4 resonances indicating magnetic focusing. dimension L, thus l L. For our samples L repre- The inset in (c) shows the used BN/graphene device and sents both the width of the Hall bar and the distance the measurement scheme. Scale bar: 5 m. (c) Non-local between two voltage probes. Considering = =(en), resistance as a function of magnetic eld and charge carrier this implies that for ballistic transport decreases as: p density. The black dashed lines show where the resonance 4eL= h n. As seen in Fig. 3(a), we indeed observe condition 2r = L is met. a signi cant decrease of with increasing n and the mea- sured mobilities for higher charge carrier densities are ple edge and the resonance condition 2r = L, with very close or even slightly above this limit. Similarly, the = 1; 2; 3:::, is met. As shown in Fig. 3(c), we observe mobilities increase with the device dimension L, see in- magnetic focusing resonances starting from charge car- set in Fig. 3(a). This suggests that the dimensions of the 12 2 rier densities of jnj < 0:25 10 cm and up to an order device is limiting the mobility in our devices rather than of 4. This shows that the charge carriers travel ballisti- intrinsic material properties of the graphene or the BN- cally over distances of at least L=2 9:6 m, proving substrate, indicating ballistic charge carriers. To further that the APHT monoisotopic BN does not introduce any prove the ballistic nature of the electron transport in our signi cant scattering and help to maintain the pristine devices we perform magnetic focusing experiments. To properties of the graphene. this end we apply a current I to one contact pair, while measuring the non-local voltage V at another pair, see After having shown low-temperature transport data on the scheme illustrated in the inset of Fig. 3(c). The ap- graphene encapsulated in monoisotopic BN, highlighting plied perpendicular magnetic eld B bends the injected device quality very much comparable to state-of-the-art charge carriers. The electrons are focused into the volt- BN/graphene sandwich devices built with HPHT BN, we age probe, when the cyclotron radius r = h n=(eB) will now focus on transport measurements at elevated is half of the distance L between the current injector and temperatures. In Fig. 4 we show the conductivity of a voltage probe, resulting in a maximum in R = V=I . Cru- BN device as a function of gate voltage (i.e. carrier cially, this eect breaks down if there is any scattering density) for various temperatures. While the conductiv- of the charge carriers. Additional maxima occur when ity decreases due to increased electron-phonon scatter- the charge carriers are re ected specularly from the sam- ing, conductivity values over 500 e =h ( 50 ) can min 12 -2 5 2 n (10 cm ) μ (10 cm /Vs) 5 2 μ (10 cm /Vs) R (Ω) 5 (a) (b) 10 10 BN/Gr BN/Gr 2.3 K 7 0 150 300 T (K) 1.6 1.8 2 2.2 10 10 12 -2 BN/Gr BN/Gr n (10 cm ) InSb 300 K InAs InP Si GaAs -30 -15 0 15 30 1 2 3 4 12 -2 V (V) n (10 cm ) BG FIG. 4. (a) Conductivity of a BN device as a function of charge carrier density n for dierent temperatures. The temperature increment between the data sets is 50 K. The inset shows the increase of n due to thermally excited charge carriers. (b) Room temperature mobility as a function of n. The blue (red and yellow) curves resemble heterostructures built with BN ( BN), whereas the black line indicates a reference samples R built with natural BN [12]. The inset depicts a close-up of the mobility values at a higher n. still be reached at room temperature with monoisotopic dicate that the quality of the APHT monoisotopic BN BN/graphene devices. Importantly, the position of the is very close to the conventional HPHT grown BN. Our CNP does not change with temperature, showing that no transport measurements show that the charge carrier mo- defects within the BN are thermally excited, which would bility in our BN/graphene devices is only limited by de- result in a nite doping of the graphene ake. Similarly, vices dimensions or temperature, rather than material the charge carrier inhomogeneity, expressed by n , stays imperfections. This shows, that APHT grown BN is low over the entire temperature range, see the inset of a true alternative to HPHT BN. Since the method of Fig. 4(a), only showing the expected broadening due to growth is more suitable for extra-large devices and larger thermally excited charge carriers within graphene. In scales [26, 27], our ndings are certainly highly inter- Fig. 4(b) we compare the extracted room temperature esting not only for fundamental research, but also for mobility of our monoisotopic BN/graphene Hall bars to applications based on graphene and related 2D materi- a reference BN/graphene-heterostructure device R based als. Importantly, the APHT method also allows for the on natural BN [12] and to other materials (see thick control of the isotopic concentrations. Thus, we believe dashed lines). Notably, the shown reference sample R that the presented work will trigger more studies explor- (see black line) is only limited by the intrinsic scattering ing the potential and bene ts of isotopically puri ed BN of electrons with acoustic and optical phonons [12, 49]. substrates. Interestingly, all our fabricated devices are very close to Aknowledgements: The authors thank L. Ban- this value and some of our devices (e.g. the one based on szerus, B. Beschoten and F. Haupt for helpful discus- BN/graphene; see blue line) are even outperforming the sions. This project has received funding from the Euro- one made from the natural BN resulting in carrier mobil- pean Unions Horizon 2020 research and innovation pro- ity values being consistently higher for increasing n (see gramme under grant agreement No 785219 (Graphene inset in Fig. 4(b)). 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Condensed Matter – arXiv (Cornell University)

**Published: ** Dec 22, 2019

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