Two-dimensional topological semimetal state in a nanopatterned semiconductor system

Two-dimensional topological semimetal state in a nanopatterned semiconductor system We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characterized by robust band-touching points which carry quantized Berry flux and edge states which terminate at the band-touching points. The topological phase transition is predicted to occur at magnetic fields ∼4T in high mobility GaAs artificial lattices, and can be detected via the anomalous behavior of the edge conductance. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Two-dimensional topological semimetal state in a nanopatterned semiconductor system

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Two-dimensional topological semimetal state in a nanopatterned semiconductor system

Abstract

We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characterized by robust band-touching points which carry quantized Berry flux and edge states which terminate at the band-touching points. The topological phase transition is predicted to occur at magnetic fields ∼4T in high mobility GaAs artificial lattices, and can be detected via the anomalous behavior of the edge conductance.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.085301
Publisher site
See Article on Publisher Site

Abstract

We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and topological semimetal phases. The topological semimetal is characterized by robust band-touching points which carry quantized Berry flux and edge states which terminate at the band-touching points. The topological phase transition is predicted to occur at magnetic fields ∼4T in high mobility GaAs artificial lattices, and can be detected via the anomalous behavior of the edge conductance.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Aug 4, 2017

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