p-n Junction Rectifying Characteristics of Purely n-Type GaN-Based Structures

p-n Junction Rectifying Characteristics of Purely n-Type GaN-Based Structures The GaN-based p-n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p-n junction rectifying characteristics can be realized with pure n-type structures by inserting an (In,Ga)N quantum well into the GaN/(Al,Ga)N/GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In,Ga)N/GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p-n junction rectifying characteristics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review Applied American Physical Society (APS)

p-n Junction Rectifying Characteristics of Purely n-Type GaN-Based Structures

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p-n Junction Rectifying Characteristics of Purely n-Type GaN-Based Structures

Abstract

The GaN-based p-n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p-n junction rectifying characteristics can be realized with pure n-type structures by inserting an (In,Ga)N quantum well into the GaN/(Al,Ga)N/GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In,Ga)N/GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p-n junction rectifying characteristics.
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Publisher
The American Physical Society
Copyright
Copyright © © 2017 American Physical Society
eISSN
2331-7019
D.O.I.
10.1103/PhysRevApplied.8.024005
Publisher site
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Abstract

The GaN-based p-n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p-n junction rectifying characteristics can be realized with pure n-type structures by inserting an (In,Ga)N quantum well into the GaN/(Al,Ga)N/GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In,Ga)N/GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p-n junction rectifying characteristics.

Journal

Physical Review AppliedAmerican Physical Society (APS)

Published: Aug 1, 2017

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